• 參數(shù)資料
    型號(hào): MC68HC711EA9VFN3
    廠商: FREESCALE SEMICONDUCTOR INC
    元件分類: 微控制器/微處理器
    英文描述: 8-BIT, OTPROM, 3 MHz, MICROCONTROLLER, PQCC52
    封裝: PLASTIC, LCC-52
    文件頁數(shù): 10/58頁
    文件大?。?/td> 583K
    代理商: MC68HC711EA9VFN3
    MOTOROLA
    MC68HC11EA9
    18
    MC68HC11EA9TS/D
    ERASE — Erase/Normal Control for EEPROM
    Refer to 4.10 EEPROM.
    EELAT — EEPROM Latch Control
    0 = EEPROM address and data bus configured for normal reads
    1 = EEPROM address and data bus configured for programming or erasing
    PGM — EPROM/OTPROM/EEPROM Programming Voltage Enable
    0 = Programming voltage to EPROM/OTPROM/EEPROM array disconnected
    1 = Programming voltage to EPROM/OTPROM/EEPROM array connected
    PGM can be read any time and can only be written when ELAT = 1 (for EPROM/OTPROM program-
    ming) or when EELAT = 1 (for EEPROM programming).
    4.10 EEPROM
    MC68HC(7)11EA9 MCUs contain 512 bytes of EEPROM. The 512-byte EEPROM is initially located at
    $B600 after reset, assuming EEPROM is enabled in the memory map by the EEON bit in the CONFIG
    register. EEPROM can be placed at any 4 Kbyte boundary ($x600) by writing appropriate values to the
    INIT register. Note that EEPROM can be mapped such that it contains the vector space. See Figure 6.
    4.10.1 Programming and Erasing EEPROM
    Programming and erasing the EEPROM is controlled by the PPROG register, and is dependent upon
    the block protect (BPROT) register value. The erased state of an EEPROM bit is one. During a read
    operation, bit lines are precharged to one. The floating gate devices of programmed bits conduct and
    pull the bit lines to zero. Unprogrammed bits remain at the precharged level and are read as ones. Pro-
    gramming a bit to one causes no change. Programming a bit to zero changes the bit so that subsequent
    reads return zero.
    When appropriate bits in the BPROT register are cleared, the PPROG register controls programming
    and erasing of the EEPROM. The PPROG register can be read or written at any time, but logic enforces
    defined programming and erasing sequences to prevent unintentional changes to data in EEPROM.
    When the EELAT bit in the PPROG register is cleared, the EEPROM can be read as if it were a ROM.
    The on-chip charge pump that generates the EEPROM programming voltage from VDD uses MOS ca-
    pacitors, which are relatively small in value. The efficiency of this charge pump and its drive capability
    are affected by the level of VDD and the frequency of the driving clock. The clock source driving the
    charge pump is software selectable. When the clock select (CSEL) bit in the OPTION register is zero,
    the E clock is used; when CSEL is one, an on-chip resistor-capacitor (RC) oscillator is used. The RC
    oscillator should be used when E < 1 MHz. This RC oscillator will drive the A/D circuitry as well as the
    EEPROM charge pump when CSEL = 1.
    The EEPROM programming voltage connection to the EEPROM array is not enabled until there has
    been a write to PPROG with EELAT set and PGM cleared. This must be followed by a write to a valid
    EEPROM location or to the CONFIG address, and then a write to PPROG with both EELAT and PGM
    set. Any attempt to set both EELAT and PGM during the same write operation results in neither bit being
    set.
    The erased state of an EEPROM byte is $FF (all ones).
    To erase the EEPROM, ensure that the proper bits of the BPROT register are cleared, then complete
    the following steps using the PPROG register:
    1.
    Set the ERASE, EELAT, and appropriate BYTE and ROW bits in PPROG register.
    2.
    Write to the appropriate EEPROM address with any data. Row erase only requires a write to
    any location in the row. Bulk erase is done by writing to any location in the array.
    3.
    Set the ERASE, EELAT, EEPGM, and appropriate BYTE and ROW bits in PPROG register.
    F
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    Freescale Semiconductor, Inc.
    For More Information On This Product,
    Go to: www.freescale.com
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