參數(shù)資料
    型號(hào): MC68HC11F1CFN2R2
    廠商: FREESCALE SEMICONDUCTOR INC
    元件分類: 微控制器/微處理器
    英文描述: 8-BIT, EEPROM, 2 MHz, MICROCONTROLLER, PQCC68
    封裝: PLASTIC, LCC-68
    文件頁數(shù): 113/163頁
    文件大小: 711K
    代理商: MC68HC11F1CFN2R2
    MC68HC11F1
    OPERATING MODES AND ON-CHIP MEMORY
    MOTOROLA
    TECHNICAL DATA
    4-15
    Recall that zeros must be erased by a separate erase operation before programming.
    The following example of how to program an EEPROM byte assumes that the appro-
    priate bits in BPROT have been cleared and the data to be programmed is present in
    accumulator A.
    4.4.1.2 EEPROM Bulk Erase
    To erase the EEPROM, ensure that the proper bits of the BPROT register are cleared,
    then complete the following steps using the PPROG register:
    1. Write to PPROG with the ERASE, EELAT, and appropriate BYTE and ROW
    bits set.
    2. Write to the appropriate EEPROM address with any data. Row erase only re-
    quires a write to any location in the row. Bulk erase is accomplished by writing
    to any location in the array.
    3. Write to PPROG with ERASE, EELAT, EEPGM, and the appropriate BYTE and
    ROW bits set.
    4. Delay for 10 ms or more, as appropriate.
    5. Clear the EEPGM bit in PPROG to turn off the high voltage.
    6. Return to step 1 for next byte or row or proceed to step 7.
    7. Clear the PPROG register to reconfigure the EEPROM address and data buses
    for normal operation.
    The following is an example of how to bulk erase the 512-byte EEPROM. The CONFIG
    register is not affected in this example. When bulk erasing the CONFIG register, CON-
    FIG and the 512-byte array are all erased.
    4.4.1.3 EEPROM Row Erase
    The following example shows how to perform a fast erase of large sections of EE-
    PROM and assumes that index register X contains the address of a location in the de-
    sired row.
    PROG
    LDAB
    #$02
    EELAT=1, EEPGM=0
    STAB
    $103B
    Set EELAT bit
    STAA
    $FE00
    Store data to EEPROM address
    LDAB
    #$03
    EELAT=1, EEPGM=1
    STAB
    $103B
    Turn on programming voltage
    JSR
    DLY10
    Delay 10 ms
    CLR
    $103B
    Turn off high voltage and set to READ mode
    BULKE
    LDAB
    #$06
    ERASE=1, EELAT=1, EEPGM=0
    STAB
    $103B
    Set EELAT bit
    STAB
    $FE00
    Store any data to any EEPROM address
    LDAB
    #$07
    EELAT=1, EEPGM=1
    STAB
    $103B
    Turn on programming voltage
    JSR
    DLY10
    Delay 10 ms
    CLR
    $103B
    Turn off high voltage and set to READ mode
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