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參數(shù)資料
| 型號： | MC33395 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | Three-Phase Gate Driver IC(3相柵極驅(qū)動器) |
| 中文描述： | 三相柵極驅(qū)動器IC（3相柵極驅(qū)動器） |
| 文件頁數(shù)： | 10/16頁 |
| 文件大小： | 534K |
| 代理商： | MC33395 |
33395
10
Go to: www.freescale.com
SYSTEM/APPLICATION INFORMATION
INTRODUCTION
The 33395 and 33395T devices are designed to provide the
necessary drive and control signal buffering and amplification to
enable a DSP or MCU to control a three-phase array of power
MOSFETs such as would be required to energize the windings
of powerful brushless DC (BLDC) motors. It contains built-in
charge pump circuitry so that the MOSFET array may consist
entirely of N-Channel MOSFETs. It also contains feedback
sensing circuitry and control circuitry to provide a robust overall
motor control design.
FUNCTIONAL DESCRIPTION
Gate Drive Circuits
The gate drive outputs (GDH1, GDH2, etc.) supply the peak
currents required to turn ON and hold ON the MOSFETs, as
well as turn OFF and hold OFF the MOSFETs.
Charge Pump
The current capability of the charge pump is sufficient to
supply the gate drive circuit’s demands when PWM’ing at up to
28 kHz. Two external charge pump capacitors and a reservoir
capacitor are required to complete the charge pump’s circuitry.
Charge reservoir capacitance is a function of the total
MOSFET gate charge (Q
G
) gate drive voltage level relative to
the source (V
GS
) and the allowable sag of the drive level during
the turn-on interval (V
SAG
). C
RES
can be expressed by the
following formula:
For example, for Q
G
= 60 nC, V
GS
= 14 V, V
SAG
= 0.2 V:
Proper charge pump capacitance is required to maintain,
and provide for, adequate gate drive during high demand turn-
ON intervals. Use the following formula to determine values for
C
P1
and
C
P2
:
For example, for the above determination of C
RES
= 0.15
μ
F:
By averaging these two values, the proper C
P
n
value can be
determined:
C
P1
and C
P2
=(0.0075
μ
F + 0.015
μ
F)
÷
2 = 0.01
μ
F
Thermal Shutdown Function
The device has internal temperature sensing circuitry which
activates a protective shutdown function should the die reach
excessively elevated temperatures. This function effectively
limits power dissipation and thus protects the device.
Overvoltage Shutdown Function
When the supply voltage (V
IGN
) exceeds the specified over-
voltage shutdown level, the part will automatically shut down to
protect both internal circuits as well as the load. Operation will
resume upon return of V
IGN
to normal operating levels.
Low Voltage Reset Function
When the logic supply voltage (V
DD
) drops below the
minimum voltage level or when the part is initially powered up,
this function will turn OFF and hold OFF the external MOSFETs
until the voltage increases above the minimum voltage level
required for normal operation.
Control Logic
The control logic block controls when the low-side and high-
side drivers are enabled. The logic implements the Truth Table
found in the specification and monitors the M0, M1, PWM, CL,
OT, OV, LSE, and HSE terminals. Note that the drivers are
enabled 3
μ
s after the PWM edge. During complimentary chop
mode the high-side and low-side drives are alternatively
enabled and disabled during the PWM cycle. To prevent shoot-
through current, the high-side drive turn-on is delayed by t
D1
,
and the low-side drive turn on is delayed by t
D2
(see
Figure 2
,
page 9).
C
RES
=
Q
G
x V
GS
2 x V
GS
x V
SAG
- V
SAG
2
C
RES
=
(60 nC) x (14 V)
2 x (14 V) x (0.2 V) - (0.2)
2
= 0.15
μ
F
C
RES
20
< C
P1
= C
P2
<
10
C
RES
0.15
μ
F
20
= 0.075
μ
F, lower limit; and
10
0.15
μ
F
= .015
μ
F, upper limit
F
Freescale Semiconductor, Inc.
For More Information On This Product,
n
.
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| MC33395TDWB | 功能描述:馬達(dá)/運(yùn)動/點(diǎn)火控制器和驅(qū)動器 TPDT RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube |
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