Table 8. 100EP DC CHARACTERISTICS, PECL VCC
參數(shù)資料
型號(hào)： MC10EP35DTG
廠商： ON Semiconductor
文件頁(yè)數(shù)： 7/11頁(yè)
文件大?。?/td> 0K
描述： IC FLIP FLOP JK ECL HS LV 8TSSOP
標(biāo)準(zhǔn)包裝： 100
系列： 10EP
功能： 復(fù)位
類型： JK 型
輸出類型： 差分
元件數(shù)： 1
每個(gè)元件的位元數(shù)： 1
頻率 - 時(shí)鐘： 3GHz
延遲時(shí)間 - 傳輸： 410ps
觸發(fā)器類型： 正邊沿
電源電壓： 3 V ~ 5.5 V
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 8-TSSOP，8-MSOP（0.118"，3.00mm 寬）
包裝： 管件
其它名稱： MC10EP35DTGOS
MC10EP35, MC100EP35
http://onsemi.com
5
Table 8. 100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 9)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
30
40
50
30
40
50
30
40
50
mA
VOH
Output HIGH Voltage (Note 10)
2155
2280
2405
2155
2280
2405
2155
2280
2405
mV
VOL
Output LOW Voltage (Note 10)
1355
1480
1605
1355
1480
1605
1355
1480
1605
mV
VIH
Input HIGH Voltage (SingleEnded)
2075
2420
2075
2420
2075
2420
mV
VIL
Input LOW Voltage (SingleEnded)
1355
1675
1355
1675
1355
1675
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
9. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to 2.2 V.
10.All loading with 50 W to VCC 2.0 V.
Table 9. 100EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 11)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
30
40
50
30
40
50
30
40
50
mA
VOH
Output HIGH Voltage (Note 12)
3855
3980
4105
3855
3980
4105
3855
3980
4105
mV
VOL
Output LOW Voltage (Note 12)
3055
3180
3305
3055
3180
3305
3055
3180
3305
mV
VIH
Input HIGH Voltage (SingleEnded)
3775
4120
3775
4120
3775
4120
mV
VIL
Input LOW Voltage (SingleEnded)
3055
3375
3055
3375
3055
3375
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
11. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to 0.5 V.
12.All loading with 50 W to VCC 2.0 V.
Table 10. 100EP DC CHARACTERISTICS, NECL VCC = 0 V; VEE = 5.5 V to 3.0 V (Note 13)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
30
40
50
30
40
50
30
40
50
mA
VOH
Output HIGH Voltage (Note 14)
1145 1020
895
1145 1020
895
1145 1020
895
mV
VOL
Output LOW Voltage (Note 14)
1945 1820 1695 1945 1820 1695 1945 1820 1695
mV
VIH
Input HIGH Voltage (SingleEnded)
1225
880
1225
880
1225
880
mV
VIL
Input LOW Voltage (SingleEnded)
1945
1625 1945
1625
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
13.Input and output parameters vary 1:1 with VCC.
14.All loading with 50 W to VCC 2.0 V.
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