參數(shù)資料
型號(hào)： MC10ELT25
廠商： ON SEMICONDUCTOR
英文描述： -5V Differential ECL to TTL Translator(-5V差分ECL到TTL轉(zhuǎn)換器)
中文描述： - 5V的差動(dòng)ECL與TTL翻譯（- 5V的差分ECL到的TTL轉(zhuǎn)換器）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 59K
代理商： MC10ELT25
MC10ELT25, MC100ELT25
http://onsemi.com
2
MAXIMUM RATINGS
(Note 1.)
Symbol
Parameter
Condition 1
Condition 2
Rating
Units
V
CC
Positive Power Supply
GND = 0 V
V
EE
= –5.0 V
7
V
V
EE
Negative Power Supply
GND = 0 V
V
CC
= +5.0 V
–8
V
V
IN
Input Voltage
GND = 0 V
0 to V
EE
±
0.5
V
I
BB
V
BB
Sink/Source
mA
TA
Operating Temperature Range
–40 to +85
°
C
T
stg
Storage Temperature Range
–65 to +150
°
C
θ
JA
Thermal Resistance (Junction to Ambient)
0 LFPM
500 LFPM
8 SOIC
8 SOIC
190
130
°
C/W
°
C/W
θ
JC
Thermal Resistance (Junction to Case)
std bd
8 SOIC
41 to 44
°
C/W
θ
JA
Thermal Resistance (Junction to Ambient)
0 LFPM
500 LFPM
8 TSSOP
8 TSSOP
185
140
°
C/W
°
C/W
θ
JC
Thermal Resistance (Junction to Case)
std bd
8 TSSOP
41 to 44
±
5%
°
C/W
T
sol
1. Maximum Ratings are those values beyond which device damage may occur.
Wave Solder
<2 to 3 sec @ 248
°
C
265
°
C
10ELT SERIES NECL DC CHARACTERISTICS
V
CC
= 5.0 V; V
EE
= –5.0 V; GND= 0 V
(Note 1.)
–40
°
C
25
°
C
85
°
C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
V
IH
Input HIGH Voltage (Single Ended)
–1230
–890
–1130
–810
–1060
–720
mV
V
IL
Input LOW Voltage (Single Ended)
–1950
–1500
–1950
–1480
–1950
–1445
mV
V
BB
Output Voltage Reference
–1.43
–1.30
–1.35
–1.25
–1.31
–1.19
V
V
IHCMR
Input HIGH Voltage Common Mode
Range (Differential) (Note 2.)
–2.8
0.0
–2.8
0.0
–2.8
0.0
V
I
IH
Input HIGH Current
150
150
150
μ
A
I
IL
Input LOW Current
0.5
0.5
0.3
μ
A
NOTE:
Devices are designed to meet the DC specifications shown in the above table, after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.
1. Input parameters vary 1:1 with GND. V
EE
can vary +0.06 V / –0.5 V.
2. V
IHCMR
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with GND.
100ELT SERIES NECL DC CHARACTERISTICS
V
CC
= 5.0 V; V
EE
= –5.0 V; GND= 0 V
(Note 1.)
–40
°
C
25
°
C
85
°
C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
V
IH
Input HIGH Voltage (Single Ended)
–1165
–880
–1165
–880
–1165
–880
mV
V
IL
Input LOW Voltage (Single Ended)
–1810
–1475
–1810
–1475
–1810
–1475
mV
V
BB
Output Voltage Reference
–1.38
–1.26
–1.38
–1.26
–1.38
–1.26
V
V
IHCMR
Input HIGH Voltage Common Mode
Range (Differential) (Note 2.)
–2.8
0.0
–2.8
0.0
–2.8
0.0
V
I
IH
Input HIGH Current
150
150
150
μ
A
I
IL
Input LOW Current
0.5
0.5
0.5
μ
A
NOTE:
Devices are designed to meet the DC specifications shown in the above table, after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.
1. Input parameters vary 1:1 with GND. V
EE
can vary +0.8 V / –0.5 V.
2. V
IHCMR
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with GND.
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參數(shù)描述
MC10ELT25D 功能描述:轉(zhuǎn)換 - 電壓電平 -5V Diff ECL to TTL RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時(shí)間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8
MC10ELT25DG 功能描述:轉(zhuǎn)換 - 電壓電平 BBG ECL TRNSLTR DIFF RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時(shí)間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8
MC10ELT25DG 制造商:ON Semiconductor 功能描述:TRANSLATOR / LOGIC LEVEL CONVERTER IC
MC10ELT25DR2 功能描述:轉(zhuǎn)換 - 電壓電平 -5V Diff ECL to TTL RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時(shí)間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8
MC10ELT25DR2G 功能描述:轉(zhuǎn)換 - 電壓電平 -5V Diff ECL to TTL RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時(shí)間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8
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