參數(shù)資料
型號(hào): MC10E163
廠商: ON SEMICONDUCTOR
英文描述: 5V ECL 2 Bit 8:1 Multiplexer(5V ECL 2位8:1多路復(fù)用器)
中文描述: 5V的ECL 2位8:1復(fù)用器(5V的ECL 2位8:1多路復(fù)用器)
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 65K
代理商: MC10E163
MC10E163, MC100E163
http://onsemi.com
4
100E SERIES PECL DC CHARACTERISTICS
V
CCx
= 5.0 V; V
EE
= 0.0 V (Note 1.)
0
°
C
25
°
C
85
°
C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
I
EE
V
OH
V
OL
V
IH
V
IL
V
BB
I
IH
I
IL
NOTE:
Power Supply Current
73
88
73
88
83
100
mA
Output HIGH Voltage (Note 2.)
–1025
–950
–880
–1025
–950
–880
–1025
–950
–880
mV
Output LOW Voltage (Note 2.)
–1810
–1705
–1620
–1810
–1745
–1620
–1810
–1740
–1620
mV
Input HIGH Voltage
–1165
–950
–880
–1165
–880
–880
–1165
–880
–880
mV
Input LOW Voltage
–1810
–1700
–1475
–1810
–1475
–1475
–1810
–1475
–1475
mV
Output Voltage Reference
–1.38
–1.26
–1.38
–1.26
–1.38
–1.26
V
Input HIGH Current
150
150
150
μ
A
Input LOW Current
0.5
0.3
0.5
0.25
0.5
0.2
μ
A
Devices are designed to meet the DC specifications shown in the above table, after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.
1. Input and output parameters vary 1:1 with V
CC
. V
EE
can vary +0.46 V / –0.8 V.
2. Outputs are terminated through a 50 ohm resistor to V
CC
–2 volts.
100E SERIES NECL DC CHARACTERISTICS
V
CCx
= 0.0 V; V
EE
= –5.0 V (Note 1.)
0
°
C
25
°
C
85
°
C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
I
EE
V
OH
V
OL
V
IH
V
IL
V
BB
I
IH
I
IL
NOTE:
Power Supply Current
73
88
73
88
83
100
mA
Output HIGH Voltage (Note 2.)
3975
4050
4120
3975
4050
4120
3975
4050
4120
mV
Output LOW Voltage (Note 2.)
3190
3295
3380
3190
3255
3380
3190
3260
3380
mV
Input HIGH Voltage
3835
4050
4120
3835
4120
4120
3835
4120
4120
mV
Input LOW Voltage
3190
3300
3525
3190
3525
3525
3190
3525
3525
mV
Output Voltage Reference
3.62
3.74
3.62
3.74
3.62
3.74
V
Input HIGH Current
150
150
150
μ
A
Input LOW Current
0.5
0.3
0.5
0.25
0.5
0.2
μ
A
Devices are designed to meet the DC specifications shown in the above table, after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.
1. Input and output parameters vary 1:1 with V
CC
. V
EE
can vary +0.46 V / –0.8 V.
2. Outputs are terminated through a 50 ohm resistor to V
CC
–2 volts.
AC CHARACTERISTICS
V
CCx
= 5.0 V; V
EE
= 0.0 V or V
CCx
= 0.0 V; V
EE
= –5.0 V (Note 1.)
0
°
C
25
°
C
85
°
C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
f
MAX
Maximum Toggle Frequency
TBD
TBD
TBD
GHz
t
PLH
t
PHL
Propagation Delay to Output
ps
D
400
525
425
350
550
725
625
525
800
950
850
725
400
525
425
350
550
725
625
525
800
950
850
725
400
525
425
350
550
725
625
525
800
950
850
725
SEL0
SEL1
SEL2
t
SKEW
Within-Device Skew (Note 2.)
ps
An, Bn to Q
40
40
40
An, Am to QA
Bn, Bm to QB
30
30
30
30
30
30
t
JITTER
Cycle–to–Cycle Jitter
TBD
TBD
TBD
ps
t
r
t
f
Rise/Fall Time
(20 - 80%)
ps
275
375
575
275
375
575
275
375
575
1. 10 Series: V
EE
can vary +0.46 V / –0.06 V.
100 Series: V
EE
can vary +0.46 V / –0.8 V.
2. Within-device skew is defined as identical transitions on similar paths through a device; n = 0-7, m n, m = 0-7.
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