參數(shù)資料
型號(hào)： MC100EPT25DTR2G
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 通用總線功能
英文描述： −3.3V / −5V Differential ECL to +3.3V LVTTL Translator
中文描述： ECL TO TTL TRANSLATOR, TRUE OUTPUT, PDSO8
封裝： LEAD FREE, PLASTIC, TSSOP-8
文件頁(yè)數(shù)： 3/9頁(yè)
文件大?。?/td> 146K
代理商： MC100EPT25DTR2G
MC100EPT25
http://onsemi.com
3
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
V
CC
Positive Power Supply
GND = 0 V
V
EE
=
5.0 V
3.8
V
V
EE
Negative Power Supply
GND = 0 V
V
CC
= +3.3 V
6
V
V
IN
Input Voltage
GND = 0 V
0 to V
EE
V
I
BB
V
BB
Sink/Source
±
0.5
mA
T
A
Operating Temperature Range
40 to +85
°
C
T
stg
Storage Temperature Range
65 to +150
°
C
JA
Thermal Resistance (Junction
to
Ambient)
0 lfpm
500 lfpm
8 SOIC
8 SOIC
190
130
°
C/W
°
C/W
JC
Thermal Resistance (Junction
to
Case)
Standard Board
8 SOIC
41 to 44
°
C/W
JA
Thermal Resistance (Junction
to
Ambient)
0 lfpm
500 lfpm
8 TSSOP
8 TSSOP
185
140
°
C/W
°
C/W
JC
Thermal Resistance (Junction
to
Case)
Standard Board
8 TSSOP
41 to 44
°
C/W
JA
Thermal Resistance (Junction
to
Ambient)
0 lfpm
500 lfpm
DFN8
DFN8
129
84
°
C/W
°
C/W
T
sol
Wave Solder
Pb
Pb
Free
<2 to 3 sec @ 248
°
C
<2 to 3 sec @ 260
°
C
265
265
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 4. NECL DC CHARACTERISTICS
V
CC
= 3.3 V; V
EE
=
5.5 V to
3.0 V; GND = 0.0 V
(Note 2)
Symbol
Characteristic
40
°
C
25
°
C
85
°
C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
8.0
16
25
8.0
16
25
8.0
16
25
mA
V
IH
Input HIGH Voltage Single
Ended
1225
880
1225
880
1225
880
mV
V
IL
Input LOW Voltage Single
Ended
1945
1625
1945
1625
1945
1625
mV
V
BB
Output Voltage Reference
1525
1425
1325
1525
1425
1325
1525
1425
1325
mV
V
IHCMR
Input HIGH Voltage Common Mode
Range (Note 3)
V
EE
+ 2.0
0.0
V
EE
+ 2.0
0.0
V
EE
+ 2.0
0.0
V
I
IH
Input HIGH Current
150
150
150
A
I
IL
Input LOW Current
0.5
0.5
0.5
A
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Input parameters vary 1:1 with GND.
3. V
IHCMR
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with V
CC
. The V
IHCMR
range is referenced to the most positive side of the differential
input signal.
Table 5. TTL OUTPUT DC CHARACTERISTICS
V
CC
= 3.3 V; V
EE
=
5.5 V to
3.0 V; GND = 0.0 V; T
A
=
40
°
C to 85
°
C
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
V
OH
Output HIGH Voltage
I
OH
=
3.0 mA
2.2
V
V
OL
Output LOW Voltage
I
OL
= 24 mA
0.5
V
I
CCH
Power Supply Current
6
10
14
mA
I
CCL
Power Supply Current
7
12
17
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC100EPT25MNR4 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:−3.3V / −5V Differential ECL to +3.3V LVTTL Translator
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