參數(shù)資料
型號: MC100EPT22
廠商: ON SEMICONDUCTOR
英文描述: 3.3V Dual LVTTL/LVCMOS to Differential LVPECL Translator(3.3V雙路LVTTL/LVCMOS到差分LVPECL轉(zhuǎn)換器)
中文描述: 3.3V雙LVTTL /以差分LVPECL翻譯的LVCMOS(3.3雙路LVTTL /的LVCMOS到差分LVPECL的轉(zhuǎn)換器)
文件頁數(shù): 4/8頁
文件大小: 148K
代理商: MC100EPT22
MC100EPT22
http://onsemi.com
4
Table 6. AC CHARACTERISTICS
V
CC
= 3.0 V to 3.6 V, GND = 0.0 V (Note 4)
Symbol
Characteristic
40
°
C
25
°
C
85
°
C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
f
max
t
PLH
,
t
PHL
Maximum Frequency (Figure 2)
0.8
1.1
0.8
1.1
0.8
1.1
GHz
Propagation Delay to
Output Differential
250
400
650
250
420
675
300
500
700
ps
t
skew
Within
Device Skew (Note 5)
Device
to
Device Skew (Note 6)
50
200
100
400
50
200
100
425
50
200
100
400
ps
t
JITTER
t
r
t
f
Random Clock Jitter (Figure 2)
0.2
< 1
0.2
< 1
0.2
< 1
ps
Output Rise/Fall Times
(20%
80%)
Q, Q
50
110
200
60
120
220
70
140
250
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Measured using a 2.4 V source, 50% duty cycle clock source. All loading with 50 to V
CC
2.0 V.
5. Skew is measured between outputs under identical transitions and conditions on any one device.
6. Device
to
Device Skew for identical transitions at identical V
CC
levels.
100
200
300
400
500
600
700
800
900
0
200
400
600
800
1000
1200
1400
1600
1
2
3
4
5
6
7
8
9
Figure 2. F
max
/Jitter
FREQUENCY (MHz)
ééééééééééééééé
(JITTER)
V
O
J
O
éé
éé
éé
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