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參數(shù)資料
| 型號： | MC100EP32MNR4G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC DIVIDER BY4 ECL CLK IN 8DFN |
| 標準包裝： | 1 |
| 系列： | 100EP |
| 邏輯類型： | 除以 2 |
| 元件數(shù)： | 1 |
| 每個元件的位元數(shù)： | 1 |
| 復位： | 異步 |
| 計數(shù)速率： | 4GHz |
| 觸發(fā)器類型： | 正，負 |
| 電源電壓： | 3 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-VFDFN 裸露焊盤 |
| 供應商設備封裝： | 8-DFN（2x2） |
| 包裝： | 剪切帶 (CT) |
| 其它名稱： | MC100EP32MNR4GOSCT |
MC10EP32, MC100EP32
http://onsemi.com
3
Table 4. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
PECL Mode Power Supply
VEE = 0 V
6
V
VEE
NECL Mode Power Supply
VCC = 0 V
6
V
VI
PECL Mode Input Voltage
NECL Mode Input Voltage
VEE = 0 V
VCC = 0 V
VI v VCC
VI w VEE
6
V
Iout
Output Current
Continuous
Surge
50
100
mA
IBB
VBB Sink/Source
± 0.5
mA
TA
Operating Temperature Range
40 to +85
°C
Tstg
Storage Temperature Range
65 to +150
°C
qJA
Thermal Resistance (JunctiontoAmbient)
0 lfpm
500 lfpm
SOIC8
190
130
°C/W
qJC
Thermal Resistance (JunctiontoCase)
Standard Board
SOIC8
41 to 44
°C/W
qJA
Thermal Resistance (JunctiontoAmbient)
0 lfpm
500 lfpm
TSSOP8
185
140
°C/W
qJC
Thermal Resistance (JunctiontoCase)
Standard Board
TSSOP8
41 to 44
°C/W
qJA
Thermal Resistance (JunctiontoAmbient)
0 lfpm
500 lfpm
DFN8
129
84
°C/W
Tsol
Wave Solder
Pb
PbFree
<2 to 3 sec @ 248°C
<2 to 3 sec @ 260°C
265
°C
qJC
Thermal Resistance (JunctiontoCase)
(Note 2)
DFN8
35 to 40
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. JEDEC standard multilayer board 2S2P (2 signal, 2 power)
Symbol
Characteristic
40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
23
30
40
23
30
40
23
30
40
mA
VOH
Output HIGH Voltage (Note 4)
2165
2290
2415
2230
2355
2480
2290
2415
2540
mV
VOL
Output LOW Voltage (Note 4)
1365
1490
1615
1430
1555
1680
1490
1615
1740
mV
VIH
Input HIGH Voltage (SingleEnded)
2090
2415
2155
2480
2215
2540
mV
VIL
Input LOW Voltage (SingleEnded)
1365
1690
1430
1755
1490
1815
mV
VBB
Output Voltage Reference
1790
1890
1990
1855
1955
2055
1915
2015
2115
mV
VIHCMR
Input HIGH Voltage Common Mode
Range (Differential Configuration) (Note 5)
2.0
3.3
2.0
3.3
2.0
3.3
V
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to 2.2 V.
4. All loading with 50 W to VCC 2.0 V.
5. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
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