參數(shù)資料
型號: MC100EP101
廠商: ON SEMICONDUCTOR
英文描述: 3.3V / 5V ECL Quad 4 Input OR/NOR(3.3V / 5V ECL 四雙輸入或/或非門)
中文描述: 3.3 / 5V的ECL四路4輸入或/或非電壓(3.3V / 5V的ECL四雙輸入或/或非門)
文件頁數(shù): 4/9頁
文件大?。?/td> 104K
代理商: MC100EP101
MC10EP101, MC100EP101
http://onsemi.com
4
Table 6. 10EP DC CHARACTERISTICS, PECL
V
CC
= 5.0 V, V
EE
= 0 V (Note 4)
40
°
C
25
°
C
85
°
C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
I
EE
Power Supply Current
45
57
75
45
58
75
45
59
75
mA
V
OH
Output HIGH Voltage (Note 5)
3865
3990
4115
3930
4055
4180
3990
4115
4240
mV
V
OL
Output LOW Voltage (Note 5)
3065
3190
3315
3130
3255
3380
3190
3315
3440
mV
V
IH
Input HIGH Voltage (SingleEnded)
3790
4115
3855
4180
3915
4240
mV
V
IL
Input LOW Voltage (SingleEnded)
3065
3390
3130
3455
3190
3515
mV
I
IH
Input HIGH Current
150
150
150
A
I
IL
Input LOW Current
150
150
150
A
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Input and output parameters vary 1:1 with V
CC
. V
EE
can vary +2.0 V to 0.5 V.
5. All loading with 50 to V
CC
2.0 V.
Table 7. 10EP DC CHARACTERISTICS, NECL
V
CC
= 0 V, V
EE
= 5.5 V to 3.0 V (Note 6)
40
°
C
25
°
C
85
°
C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
I
EE
Power Supply Current
45
57
75
45
58
75
45
59
75
mA
V
OH
Output HIGH Voltage (Note 7)
1135
1010
885
1070
945
820
1010
885
760
mV
V
OL
Output LOW Voltage (Note 7)
1935
1810
1685
1870
1745
1620
1810
1685
1560
mV
V
IH
Input HIGH Voltage (SingleEnded)
1210
885
1145
820
1085
760
mV
V
IL
Input LOW Voltage (SingleEnded)
1935
1610
1870
1810
1485
mV
I
IH
Input HIGH Current
150
150
150
A
I
IL
Input LOW Current
150
150
150
A
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
6. Input and output parameters vary 1:1 with V
CC
.
7. All loading with 50 to V
CC
2.0 V.
Table 8. 100EP DC CHARACTERISTICS, PECL
V
CC
= 3.3 V, V
EE
= 0 V (Note 8)
40
°
C
25
°
C
85
°
C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
I
EE
Power Supply Current
40
55
75
40
58
75
45
60
85
mA
V
OH
Output HIGH Voltage (Note 9)
2155
2280
2405
2155
2280
2405
2155
2280
2405
mV
V
OL
Output LOW Voltage (Note 9)
1355
1480
1605
1355
1480
1605
1355
1480
1605
mV
V
IH
Input HIGH Voltage (SingleEnded)
2075
2420
2075
2420
2075
2420
mV
V
IL
Input LOW Voltage (SingleEnded)
1355
1675
1355
1675
1355
1675
mV
I
IH
Input HIGH Current
150
150
150
A
I
IL
Input LOW Current
150
150
150
A
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
8. Input and output parameters vary 1:1 with V
CC
. V
EE
can vary +0.3 V to 2.2 V.
9. All loading with 50 to V
CC
2.0 V.
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