Table 6. 100E SERIES NECL DC CHARACTERISTICS VC" />
參數(shù)資料
型號(hào): MC100E101FN
廠(chǎng)商: ON Semiconductor
文件頁(yè)數(shù): 4/7頁(yè)
文件大小: 0K
描述: IC GATE OR/NOR QUAD 4INP 28-PLCC
產(chǎn)品變化通告: Product Discontinuation 07/Oct/2008
標(biāo)準(zhǔn)包裝: 37
系列: 100E
邏輯類(lèi)型: 或非門(mén)/或門(mén)
電路數(shù): 4
輸入數(shù): 16 輸入(4,4,4,4)
施密特觸發(fā)器輸入: 無(wú)
輸出類(lèi)型: 差分
電源電壓: 4.2 V ~ 5.7 V
工作溫度: -40°C ~ 85°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 28-LCC(J 形引線(xiàn))
供應(yīng)商設(shè)備封裝: 28-PLCC(11.51x11.51)
包裝: 管件
MC10E101, MC100E101
http://onsemi.com
4
Table 6. 100E SERIES NECL DC CHARACTERISTICS VCCx = 0.0 V; VEE = 5.0 V (Note 7)
Symbol
Characteristic
40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
30
36
30
36
35
42
mA
VOH
Output HIGH Voltage (Note 8)
1025
950
880
1025
950
880
1025
950
880
mV
VOL
Output LOW Voltage (Note 8)
1810 1705 1620 1810 1745 1620 1810 1740 1620
mV
VIH
Input HIGH Voltage
1165 1025
880
1165 1025
880
1165 1025
880
mV
VIL
Input LOW Voltage
1810 1645 1475 1810 1645 1475 1810 1645 1475
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
0.3
0.5
0.25
0.5
0.2
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
7. Input and output parameters vary 1:1 with VCC. VEE can vary 0.46 V / +0.8 V.
8. Outputs are terminated through a 50 W resistor to VCC 2.0 V.
Table 7. AC CHARACTERISTICS VCCx= 5.0 V; VEE = 0.0 V or VCCx = 0.0 V; VEE = 5.0 V (Note 9)
Symbol
Characteristic
40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
fMAX
Maximum Toggle Frequency
700
MHz
tPLH
tPHL
Propagation Delay to Output
D to Q
300
450
600
300
450
600
300
450
600
ps
tSKEW
Within-Device Skew (Note 10)
Within-Gate Skew (Note 11)
50
25
50
25
50
25
ps
tJITTER
Random Clock Jitter (RMS)
< 1
ps
tr
tf
Rise/Fall Time
(20 - 80%)
275
380
575
300
380
575
275
380
575
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
9. 10 Series: VEE can vary 0.46 V / +0.06 V.
100 Series: VEE can vary 0.46 V / +0.8 V.
10.Within-device skew is defined as identical transitions on similar paths through a device.
11. Within-gate skew is defined as the variation in propagation delays of a gate when driven from its different inputs.
Figure 3. Typical Termination for Output Driver and Device Evaluation
(See Application Note AND8020/D Termination of ECL Logic Devices.)
Driver
Device
Receiver
Device
QD
Q
D
Zo = 50 W
50 W
VTT
VTT = VCC 2.0 V
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