- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299471 > MC-4R512FKK8K-840 (ELPIDA MEMORY INC) 512MB 32-bit Direct Rambus DRAM RIMM Module PDF資料下載
參數(shù)資料
| 型號： | MC-4R512FKK8K-840 |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 512MB 32-bit Direct Rambus DRAM RIMM Module |
| 中文描述： | 256M X 18 DIRECT RAMBUS DRAM MODULE, DMA232 |
| 封裝： | RIMM-232 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MC-4R512FKK8K-840 |
(2/3URGX.W
MC-4R512FKK8K
Preliminary Data Sheet E0254N10 (Ver. 1.0)
5
Signal
Module
connector pads
I/O
Type
Description
ROW2_THRU_R..
ROW0_THRU_R
A52, B50, A50
I
RSL
Row bus. 3-bit bus containing control and address information
for row accesses. Connects to right RDRAM device on "Thru"
Channel.
SCK_THRU_L
A2
I
VCMOS
Serial Clock input. Clock source used to read from and write
to "Thru" Channel RDRAM control registers. Connects to left
RDRAM device on "Thru" Channel.
SCK_THRU_R
A71
I
VCMOS
Serial Clock input. Clock source used to read from and write
to "Thru" Channel RDRAM control registers. Connects to right
RDRAM device on "Thru" Channel.
SIN_THRU
B34
I/O
VCMOS
"Thru" Channel Serial I/O for reading from and writing to the
control registers. Attaches to SIO0 of right RDRAM device on
"Thru" Channel.
SOUT_THRU
A34
I/O
VCMOS
"Thru" Channel Serial I/O for reading from and writing to the
control registers. Attaches to SIO1 of left RDRAM device on
"Thru" Channel.
CFM_TERM
B103
I
RSL
Clock from master. Connects to right RDRAM device on
"Term" Channel. Interface clock used for receiving RSL
signals from the controller. Positive polarity.
CFMN_TERM
B101
I
RSL
Clock from master. Connects to right RDRAM device on
"Term" Channel. Interface clock used for receiving RSL
signals from the controller. Negative polarity.
CMD_TERM
A115
I
VCMOS
Serial Command Input used to read from and write to the
control registers. Also used for power management.
Connects to right RDRAM device on "Term" Channel.
COL4_TERM..
COL0_TERM
B97, A97, B95, A95,
B93
I
RSL
"Term" Channel Column bus. 5-bit bus containing control and
address information for column accesses. Connects to right
RDRAM device on "Term" Channel.
CTM_TERM_L
B73
I
RSL
Clock To Master. Connects to left RDRAM device on "Term"
Channel. Interface clock used for transmitting RSL signals to
the controller. Positive polarity.
CTM_TERM_R
A103
I
RSL
Clock To Master. Connects to right RDRAM device on "Term"
Channel. Interface clock used for transmitting RSL signals to
the controller. Positive polarity.
CTMN_TERM_L
B71
I
RSL
Clock To Master. Connects to left RDRAM device on "Term"
Channel. Interface clock used for transmitting RSL signals to
the controller. Negative polarity.
CTMN_TERM_R
A105
I
RSL
Clock To Master. Connects to right RDRAM device on "Term"
Channel. Interface clock used for transmitting RSL signals to
the controller. Negative polarity.
DQA8_TERM..
DQA0_TERM
B113, A113, B111,
A111, B109, A109,
B107, A107, B105
I/O
RSL
"Term" Channel Data bus A. A 9-bit bus carrying a byte of
read or write data between the controller and RDRAM devices
on “Term” Channel. Connects to right RDRAM device on
"Term" Channel. DQA8_TERM is non-functional on modules
with x16 RDRAM devices.
DQB8_TERM..
DQB0_TERM
A85, B85, A87, B87,
A89, B89, A91, B91,
A93
I/O
RSL
"Term" Channel Data bus B. A 9-bit bus carrying a byte of
read or write data between the controller and RDRAM devices
on “Term” Channel. Connects to right RDRAM device on
"Term" Channel. DQB8_TERM is non-functional on modules
with x16 RDRAM devices.
ROW2_TERM..
ROW0_TERM
A101, B99, A99
I
RSL
"Term" Channel Row bus. 3-bit bus containing control and
address information for row accesses. Connects to right
RDRAM device on "Term" Channel.
SCK_TERM
B115
I
VCMOS
Serial Clock input. Clock source used to read from and write
to "Term" Channel RDRAM control registers. Connects to
right RDRAM device on "Term" Channel.
SIN_TERM
B83
I/O
VCMOS
"Term" Channel Serial I/O for reading from and writing to the
control registers. Attaches to SIO0 of left RDRAM device on
"Term" Channel.
VTERM
A60, B60, A61, B61
"Term" Channel Termination voltage.
相關PDF資料 |
PDF描述 |
|---|---|
| MC-4R512FKK8K | 512MB 32-bit Direct Rambus DRAM RIMM Module |
| MC-4R64FKE8D-840 | Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT) |
| MC-4R64FKE8D-845 | EVALUATION BOARD FOR MPC |
| MC-4R64FKE8S-840 | Direct Rambus DRAM SO-RIMM Module |
| MC-4R64FKE8S-845 | Direct Rambus DRAM SO-RIMM Module |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4R64CEE6B | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
| MC-4R64CEE6B-653 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
| MC-4R64CEE6B-745 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
| MC-4R64CEE6B-845 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
| MC-4R64CEE6C | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
發(fā)布緊急采購，3分鐘左右您將得到回復。