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參數(shù)資料
| 型號： | MC-4R256FKK8K-840 |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 256MB 32-bit Direct Rambus DRAM RIMM Module |
| 中文描述： | 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA232 |
| 封裝： | RIMM-232 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 91K |
| 代理商： | MC-4R256FKK8K-840 |
MC-4R256FKK8K
Preliminary Data Sheet E0253N10 (Ver. 1.0)
10
RIMM Module Current Profile
IDD
RIMM module power conditions
Note1
MAX.
Unit
IDD1
One RDRAM device per channel in Read
Note2
,
balance in NAP mode
One RDRAM device per channel in Read
Note2
,
balance in Standby mode
One RDRAM device per channel in Read
Note2
,
balance in Active mode
One RDRAM device per channel in Write,
balance in NAP mode
One RDRAM device per channel in Write,
balance in Standby mode
One RDRAM device per channel in Write,
balance in Active mode
Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage
patterns. Please refer to specific RIMM module vendor data sheets for additional information. Power does
not include Refresh Current. Max current computed for x16 256Mb RDRAM components. x18 288Mb
RDRAM components use 8 mA more current per RDRAM device in Read and 60mA more current per
RDRAM device in Write.
2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257mA or
290mA for x18 ECC module for the following : VDD = 2.5V, VTERM = 1.8V, VREF = 1.4V and VDIL =
VREF
0.5V.
1435
mA
IDD2
1950
mA
IDD3
2220
mA
IDD4
1555
mA
IDD5
2070
mA
IDD6
2340
mA
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| MC-4R512FKE6D-840 | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
| MC-4R512FKE6D | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
| MC-4R512FKE6D-653 | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
| MC-4R512FKE6D-745 | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
| MC-4R512FKE6D-845 | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4R512FKE6D | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
| MC-4R512FKE6D-653 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
| MC-4R512FKE6D-745 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
| MC-4R512FKE6D-840 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
| MC-4R512FKE6D-845 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) |
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