參數(shù)資料
型號(hào): MC-4R256FKE8D-840
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
中文描述: 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA184
封裝: SOCKET TYPE, RIMM-184
文件頁(yè)數(shù): 10/14頁(yè)
文件大?。?/td> 128K
代理商: MC-4R256FKE8D-840
Data Sheet
E0265N10 (Ver 1.0)
10
MC-4R256FKE8D-840
RIMM Module Current Profile
I
DD
RIMM module power conditions
Note1
MAX.
Unit
I
DD1
One RDRAM in Read
Note2
, balance in NAP mode
734.4
mA
I
DD2
One RDRAM in Read
Note2
, balance in Standby mode
1335
mA
I
DD3
One RDRAM in Read
Note2
, balance in Active mode
1650
mA
I
DD4
One RDRAM in Write, balance in NAP mode
794.4
mA
I
DD5
One RDRAM in Write, balance in Standby mode
1395
mA
I
DD6
One RDRAM in Write, balance in Active mode
1710
mA
Notes 1.
Actual power will depend on individual RDRAM component specifications, memory controller and usage
patterns. Power does not include Refresh Current.
2.
I/O current is a function of the
% of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA or 290
mA for x18 ECC module for the following :
V
DD
= 2.5 V, V
TERM
= 1.8 V, V
REF
= 1.4 V and V
DIL
= V
REF
0.5 V.
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