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參數(shù)資料
| 型號(hào)： | MC-4R128CPE6C |
| 廠(chǎng)商： | NEC Corp. |
| 英文描述： | Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
| 中文描述： | 直接Rambus的128M的內(nèi)存RIMM的模塊技嘉6400字× 16位 |
| 文件頁(yè)數(shù)： | 8/16頁(yè) |
| 文件大?。?/td> | 133K |
| 代理商： | MC-4R128CPE6C |
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Preliminary Data Sheet M14807EJ2V0DS00
8
MC-4R128CPE6C
Electrical Specification
Absolute Maximum Ratings
Symbol
Parameter
MIN.
MAX.
Unit
V
I,ABS
Voltage applied to any RSL or CMOS signal pad with respect to GND
0.3
V
DD
+ 0.3
V
V
DD,ABS
Voltage on V
DD
with respect to GND
0.5
V
DD
+ 1.0
V
T
STORE
Storage temperature
50
+100
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Recommended Electrical Conditions
Symbol
Parameter and conditions
MIN.
MAX.
Unit
V
DD
Supply voltage
2.50
0.13
2.50 + 0.13
V
V
CMOS
CMOS I/O power supply at pad
2.5V controllers
2.5
0.13
2.5 + 0.25
V
1.8V controllers
1.8
0.1
1.8 + 0.2
V
REF
Reference voltage
1.4
0.2
1.4 + 0.2
V
V
IL
RSL input low voltage
V
REF
0.5
V
REF
0.2
V
V
IH
RSL input high voltage
V
REF
+ 0.2
V
REF
+ 0.5
V
V
IL,CMOS
CMOS input low voltage
0.3
0.5V
CMOS
0.25
V
V
IH,CMOS
CMOS input high voltage
0.5V
CMOS
+0.25
V
CMOS
+ 0.3
V
V
OL,CMOS
CMOS output low voltage, I
OL,CMOS
= 1 mA
—
0.3
V
V
OH,CMOS
CMOS output high voltage, I
OH,CMOS
=
0.25 mA
V
CMOS
0.3
—
V
I
REF
V
REF
current, V
REF
,
MAX
80.0
+80.0
μ
A
I
SCK,CMD
CMOS input leakage current, (0
≤
V
CMOS
≤
V
DD
)
80.0
+80.0
μ
A
I
SIN,SOUT
CMOS input leakage current, (0
≤
V
CMOS
≤
V
DD
)
10.0
+10.0
μ
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-4R128CPE6C-653 | Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
| MC-4R128FKE6D-840 | Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT) |
| MC-4R128FKE8D-653 | Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
| MC-4R128FKE8D-745 | Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
| MC-4R128FKE8D-845 | Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 18-BIT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4R128CPE6C-653 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
| MC-4R128CPE6C-745 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
| MC-4R128CPE6C-845 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
| MC-4R128FKE6D | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT) |
| MC-4R128FKE6D-653 | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT) |
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