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參數(shù)資料
| 型號： | MC-4564EC726PFB-A10 |
| 廠商： | NEC Corp. |
| 英文描述： | 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| 中文描述： | 64的M - Word的72位同步動態(tài)隨機存儲器模塊注冊的類型 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 292K |
| 代理商： | MC-4564EC726PFB-A10 |
Data Sheet M14460EJ2V0DS00
6
MC-4564EC726
Electrical Specifications
All voltages are referenced to V
SS
(GND).
After power up, wait more than 1 ms and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND
V
CC
–0.5 to +4.6
V
Voltage on input pin relative to GND
V
T
–0.5 to +4.6
V
Short circuit output current
I
O
50
mA
Power dissipation
P
D
40
W
Operating ambient temperature
T
A
0 to 70
°
C
Storage temperature
T
stg
–55 to +125
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
3.0
3.3
3.6
V
High level input voltage
V
IH
2.0
V
CC
+
0.3
V
Low level input voltage
V
IL
–0.3
+0.8
V
Operating ambient temperature
T
A
0
70
°
C
Capacitance (T
A
= 25
°
C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
I1
A0 - A11, BA0
(A13), BA1
(A12),
/RAS, /CAS, /WE
TBD
TBD
pF
C
I2
CLK0
TBD
TBD
C
I3
CKE0
TBD
TBD
C
I4
/CS0 - /CS3
TBD
TBD
C
I5
DQMB0
-
DQMB7
TBD
TBD
Data input/output capacitance
C
I/O
DQ0 - DQ63, CB0 - CB7
TBD
TBD
pF
#
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