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參數資料
| 型號： | MC-454AC726 |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-Word By 72-BIT Dynamic RAM Module(4M×72位動態(tài)RAM模塊) |
| 中文描述： | 分詞由72位動態(tài)內存模塊（4米× 72位動態(tài)內存模塊） |
| 文件頁數： | 6/16頁 |
| 文件大?。?/td> | 150K |
| 代理商： | MC-454AC726 |
6
MC-454AC726
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Test condition
Grade
MIN.
MAX.
Unit
Notes
Operating current
I
CC1
Burst length
=
1
/CAS latency = 2
-A80
1,197
mA
1
t
RC
≥
t
RC(MIN.)
, I
O
= 0
mA
-A10
1,197
/CAS latency = 3
-A80
1,287
-A10
1,287
Precharge standby current in
I
CC2
P
CKE
≤
V
IL(MAX.)
, t
CK
=
15
ns
54
mA
power down mode
I
CC2
PS CKE
≤
V
IL(MAX.)
, t
CK
=
∞
36
Precharge standby current in
non power down mode
I
CC2
N
CKE
≥
V
IH(MIN.)
, t
CK
=
15
ns, /CS
≥
V
IH(MIN.)
,
Input signals are changed one time during 30
ns.
450
mA
I
CC2
NS CKE
≥
V
IH(MIN.)
, t
CK
=
∞
Input signals are stable.
108
Active standby current in
I
CC3
P
CKE
≤
V
IL(MAX.)
, t
CK
=
15
ns
54
mA
power down mode
I
CC3
PS CKE
≤
V
IL(MAX.)
, t
CK
=
∞
36
Active standby current in
I
CC3
N
CKE
≥
V
IH(MIN.)
, t
CK
=
15
ns, /CS
≥
V
IH(MIN.)
,
Input signals are changed one time during 30
ns.
504
mA
non power down mode
I
CC3
NS CKE
≥
V
IH(MIN.)
, t
CK
=
∞
Input signals are stable.
216
Operating current
I
CC4
t
CK
≥
t
CK(MIN.)
/CAS latency = 2
-A80
1,197
mA
2
(Burst mode)
I
O
= 0
mA
-A10
1,017
/CAS latency = 3
-A80
1,332
-A10
1,152
Refresh current
I
CC5
t
RC
≥
t
RC(MIN.)
1,062
mA
3
Self refresh current
I
CC6
CKE
≤
0.2
V
18
mA
Input leakage current
I
I(L)
V
I
=
0 to 3.6
V,
All other pins not under test =
0 V
–
18
+18
μ
A
Input leakage current (CKE1)
–
500 +500
Output leakage current
I
O(L)
D
OUT
is disabled, V
O
=
0 to 3.6
V
–
3
+3
μ
A
High level output voltage
V
OH
I
O
=
–
4.0
mA
2.4
V
Low level output voltage
V
OL
I
O
=
+
4.0
mA
0.4
V
Notes 1.
I
CC1
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC1
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
2
. I
CC4
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC4
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
3.
I
CC5
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
#
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相關PDF資料 |
PDF描述 |
|---|---|
| MC-454AD644-A67 | 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AC724 | 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AC724F-A67 | 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD644 | 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD646 | 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MC-454AD644 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD644-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD644-A12 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD644-A67 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD646 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
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