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參數資料
| 型號： | MC-454AC725 |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-Word By 72-BIT Dynamic RAM Module(4M×72位動態(tài)RAM模塊) |
| 中文描述： | 分詞由72位動態(tài)內存模塊（4米× 72位動態(tài)內存模塊） |
| 文件頁數： | 1/20頁 |
| 文件大小： | 184K |
| 代理商： | MC-454AC725 |
1997
MOS INTEGRATED CIRCUIT
MC-454AC725
4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
DATA SHEET
The mark
shows major revised points.
Document No. M12669EJ3V0DS00 (3rd edition)
Date Published May 1998 NS CP (K)
Printed in Japan
The information in this document is subject to change without notice.
Description
The MC-454AC725 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M
SDRAM:
μ
PD4516821A are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
4,194,304 words by 72 bits organization (ECC type)
Clock frequency and clock access time
Family
/CAS latency
Clock frequency
Clock access time
Power consumption (MAX.)
(MAX.)
(MAX.)
Active
Standby
MC-454AC725-A80
CL = 3
125 MHz
6 ns
6,091 mW
129.6 mW
CL = 2
83 MHz
7 ns
4,957 mW
(CMOS level input)
MC-454AC725-A10
CL = 3
100 MHz
7 ns
5,119 mW
CL = 2
77 MHz
8 ns
4,147 mW
MC-454AC725-A12
CL = 3
83 MHz
8 ns
4,471 mW
CL = 2
67 MHz
9 ns
3,499 mW
MC-454AC725-A10B
CL = 3
100 MHz
7 ns
4,147 mW
CL = 2
77 MHz
8 ns
3,823 mW
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Dual internal banks controlled by BA0 (Bank Select)
Programmable burst-length: 1, 2, 4, 8 and full page
Programmable wrap sequence (sequential
/
interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10
±
10
% of series resistor
Single 3.3
V
±
0.3
V power supply
LVTTL compatible
2,048 refresh cycles / 32
ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27
mm)
Unbuffered type
Serial PD
#
相關PDF資料 |
PDF描述 |
|---|---|
| MC-454AC726 | 4M-Word By 72-BIT Dynamic RAM Module(4M×72位動態(tài)RAM模塊) |
| MC-454AD644-A67 | 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AC724 | 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AC724F-A67 | 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD644 | 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MC-454AD644 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD644-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD644-A12 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD644-A67 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AD646 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
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