參數(shù)資料
型號: MBT3906DW
廠商: Electronic Theatre Controls, Inc.
英文描述: Dual General Purpose Transistor PNP+PNP Silicon
中文描述: 雙通用硅晶體管的新進步黨進步黨
文件頁數(shù): 1/6頁
文件大小: 792K
代理商: MBT3906DW
Dual General Purpose Transistor
PNP+PNP Silicon
* “G” Lead(Pb)-Free
1.Decice Mounted on FR4 glass epoxy printed circuit board using the minimun recommended foot print.
2.Pulse Test:Pluse Width<
<
Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
-40
-40
-5.0
-200
Unit
Vdc
Vdc
Vdc
mAdc
Rating
MBT3906DW=A2
Device Marking
Collector-Emitter Breakdown Voltage
(2)
(I
C
=-1.0mAdc.I
B
=0)
Collector-Base Breakdown Voltage (I
C
=-10 uAdc, I
E
=0)
Emitter-Base Breakdown Voltage (I
E
=-10 uAdc, I
C
=0)
Base Cutoff Current (V
CE
=-30 Vdc, V
EB
=-3.0 Vdc)
Collector Cutoff Current (V
CE
=-30Vdc, V
EB
=-3.0Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
-50
-50
Vdc
Vdc
Vdc
nAdc
nAdc
Off Characteristics
MBT3906DW
-40
-40
-5.0
-
-
-
-
-
Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
http://www.weitron.com.tw
WEITRON
Thermal Resistance, Junction to Ambient
Total Device Dissipation T
A
=25 C
Junction and Storage, Temperature
Characteristics
TJ,Tstg
PD
Symbol
Max
833
-55 to +150
Unit
mW
C/W
C
Thermal Characteristics
R JA
SOT-363(SC-88)
(1)
150
3
4
5
1
2
6
PNP+PNP
123
654
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