- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄181330 > MBRS25H45CT 12.5 A, 45 V, SILICON, RECTIFIER DIODE PDF資料下載
參數(shù)資料
| 型號： | MBRS25H45CT |
| 元件分類： | 整流器 |
| 英文描述： | 12.5 A, 45 V, SILICON, RECTIFIER DIODE |
| 封裝： | GREEN, PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 126K |
| 代理商： | MBRS25H45CT |
CREAT BY ART
UL Recognized File # E-326854
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High Surge capability
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
Unit
VRRM
V
VRMS
V
VDC
V
dV/dt
V/uS
TJ
OC
TSTG
OC
Note2 Thermal Resistance from Junction to Case Per Leg
IR
0.2
15
mA
Maximum Thermal Resistance Per Leg (Note 2)
RθJC
RθJA
1.5
50
OC/W
VF
0.70
V
0.60
0.90
0.75
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
IFSM
150
A
25.0AMPS Surface Mount Schottky Barrier Rectifier
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
For use in low voltage, high frequency inverters,
, free wheeling, and polarity protection applications
High temperature soldering guaranteed: 260℃/
10 seconds at terminals
D
2PAK
Guarding for over voltage protection
Features
MBRS25H45CT = Specific Device Code
G
= Green Compound
Polarity: As marked
Green compound with suffix "G" on packing code &
prefix "G" on datecode
Dimensions in inches and (millimeters)
MBRS25H45CT
Note1: Pulse Test : 300us Pulse Width, 1% Duty cycle
-65 to + 175
10,000
-65 to + 175
45
31
MBRS25H45CT
Version:C11
Operating Temperature Range
Storage Temperature Range
Y
= Year
Case: JEDEC D
2PAK molded plastic
Maximum Average Forward Rectified Current
@Tc = 155℃(Total Device)
Terminals: Leads solderable per MIL-STD-750, Method 2026
Marking Diagram
45
Maximum RMS Voltage
Maximum Repetitive Peak Reverse Voltage
WW
= Work Week
Voltage rate of change (Rated VR)
Type Number
Maximum Ratings and Electrical Characteristic
Weight: 1.41 grams
Maximum Instantaneous Forward Voltage at (Note 1)
IF = 12.5A, Ta=25℃
IF = 12.5A, Ta=125℃
IF = 25A, Ta=25℃
IF = 25A, Ta=125℃
Maximum Reverse Current
TA=25 ℃
TA=125 ℃
Mechanical Data
Mounting position: Any
Maximum DC blocking voltage
IF(AV)
25
Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBRS320TRPBF | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AB |
| MBRS320 | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AB |
| MBRS340-G | 3 A, SILICON, RECTIFIER DIODE |
| MBRS360 | 4 A, 60 V, SILICON, RECTIFIER DIODE |
| MBRX0530-TPS01 | 0.5 A, 30 V, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRS25H45CT_11 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:25.0AMPS Surface Mount Schottky Barrier Rectifier |
| MBRS25H45CT_13 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:25.0AMPS Surface Mount Schottky Barrier Rectifier |
| MBRS260T3 | 功能描述:肖特基二極管與整流器 2A 60V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRS260T3_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
| MBRS260T3D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。