參數(shù)資料
型號(hào): MBRS2535CT
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: 25.0 AMPS. Schottky Barrier Rectifiers
中文描述: 25.0安培。肖特基
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 81K
代理商: MBRS2535CT
- 154 -
MBRS2535CT
THRU
MBRS2560CT
25.0 AMPS. Schottky Barrier Rectifiers
Voltage Range
35 to 60 Volts
Current
25.0 Amperes
D
2
PAK
Features
For surface mounted application
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
C/10 seconds at terminals
Mechanical Data
Cases: JEDEC D
2
PAK molded plastic
Terminals: Leads solderable per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.06 ounce, 1.70 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
MBRS
2535CT
35
24
35
MBRS
2545CT
45
31
45
MBRS
2550CT
50
35
50
MBRS
2560CT
60
42
60
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at
T
C
=130
C
Peak Repetitive Forward Current (Rated V
R
, Square
Wave, 20KHz) at Tc=130
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
I
F
=12.5A, Tc=25
C
I
F
=12.5A, Tc=125
O
C
I
F
=25A, Tc=25
C
I
F
=25A, Tc=125
O
C
V
RRM
V
RMS
V
DC
V
V
V
I
(AV)
25
A
I
FRM
25.0
A
I
FSM
200
A
I
RRM
V
F
1.0
0.5
A
V
mA
mA
0.82
0.73
0.75
0.65
Maximum Instantaneous Reverse Current @ Tc=25
at
R
ated
DC
Blocking Voltage Per Leg @ Tc=125
(Note 2)
Voltage Rate of Change, (Rated V
R
)
M
aximum
T
hermal
R
esistance
P
er
L
eg (
N
ote 3)
Operating Junction Temperature Range
Storage Temperature Range
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg
I
R
0.2
40.0
1.0
50.0
dV/dt
R
θ
JC
T
J
T
STG
1,000
1.0
-65 to +150
-65 to +175
V/uS
/W
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