參數(shù)資料
型號： MBRP20060CT
廠商： MOTOROLA INC
元件分類： 參考電壓二極管
英文描述： SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLT
中文描述： 100 A, 60 V, SILICON, RECTIFIER DIODE
文件頁數(shù)： 1/6頁
文件大?。?/td> 191K
代理商： MBRP20060CT
1
Motorola, Inc. 1995
POWERTAP
II Package
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State of the art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies, free wheeling diode and polarity protection
diodes.
Guardring for Stress Protection
Matched dual die construction – May be Paralleled for High Current Output
High dv/dt Capability
Very Low Forward Voltage Drop
Mechanical Characteristics:
Case: Epoxy, Molded with Metal Heatsink Base
Weight: 80 grams (approximately)
Finish: All External Surfaces Corrosion Resistant
Base Plate Torques: See procedure given in the Package Outline Section
Top Terminal Torque: 70 in–lb max.
Shipped 25 units per foam
Marking: MBRP20060CT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 120
°
C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 125
°
C)
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IO
60
Volts
Per Leg
Per Package
100
200
Amps
Per Leg
IFRM
200
Amps
Per Package
IFSM
1500
Amps
Storage/Operating Case Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR, TJ = 25
°
C)
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Case
Tstg, TC
TJ
dv/dt
–55 to +150
–55 to +150
1,000
°
C
°
C
V/
μ
s
Per Leg
Rtjc
0.44
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1), see Figure 2
(IF = 200 Amps)
Per Leg
VF
TJ = 25
°
C
0.80
0.92
TJ = 25
°
C
0.5
0.2
TJ = 100
°
C
0.72
0.82
TJ = 100
°
C
100
50
Volts
(IF = 100 Amps)
Maximum Instantaneous Reverse Current, see Figure 4
(VR = 30 V)
Per Leg
IR
mA
(VR = 60 V)
(1) Pulse Test: Pulse Width
≤
250
μ
s, Duty Cycle
≤
2%.
POWERTAP and SWITCHMODE are trademarks of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBRP20060CT/D
SCHOTTKY BARRIER
RECTIFIER
200 AMPERES
60 VOLTS
CASE 357C-03
POWERTAP II
1
2
3
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參數(shù)描述
MBRP20060CTG 功能描述:肖特基二極管與整流器 200A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBRP2045N 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:SCHOTTKY BARRIER RECTIFIER
MBRP2045NTU 功能描述:肖特基二極管與整流器 Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBRP2045NTU_Q 功能描述:肖特基二極管與整流器 Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBRP24035 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:240 AMP SCHOTTKY RECTIFIER
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