參數(shù)資料
型號(hào)： MBRF830CT
元件分類： 整流器
英文描述： 4 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： PLASTIC, ITO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 354K
代理商： MBRF830CT
Notes: 1. Pulse Test: 300s Pulse Width, 1% Duty Cycle
2. Thermal Resistance from Junction to Case Per leg
Voltage
30 to 100 V
Current
8.0 A
Jun - 09
VF
IR
Rthj-C
Typical Thermal Resistance Per Leg (Note 2)
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS voltage (V)
Maximum DC blocking voltage (V)
Maximum Average Forward Rectified Current
See Fig.
Per Leg
VRRM
VRMS
VDC
IF (AV)
Tj
Tstg
Operating Junction Temperature Range
Storage Temperature Range
– 65 to + 150 °C
IFSM
8 A
150 A
– 65 to + 150 °C
60
42
60
Absolute Maximum Ratings, according to IEC publication No. 134
ITO-220AB
100
70
100
Isolated 8.0 Amp. Schottky Barrier Rectifier
30
21
30
MBRF
830CT
0.55 V
0.70 V
0.80 V
5.0 mA
6.0 °C/W
1 2
3
Common Cathode
Suffix "C"
1
3
2
Case
MBRF830CT ....... MBRF8100CT
MBRF
840CT
MBRF
850CT
MBRF
860CT
MBRF
8100CT
40
28
40
50
35
50
4 A
Electrical Characteristics
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC Method)
MBRF
830CT
MBRF
840CT
MBRF
850CT
MBRF
860CT
MBRF
8100CT
Maximum Instantaneous Forward Voltage at
(Note 1)
IF = 4 A, Tc = 25 °C
Maximum Instantaneous ForwardCurrent
at Rated DC Blocking Voltage @ Tc = 25 °C
@ Tc = 125 °C
50 mA
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
Terminals: Leads solderable per MIL-STD-750,
Method 2026
Low power loss, high efficiency
Cases: ITO-220AB molded plastic
Polarity: As marked
Weight: 2.24 grams
Metal silicon junction, majority carrier conduction
High current capability, low forward voltage drop
High surge capability
Mounting position: Any
Guardring for overvoltage protection
High temperature soldering guaranteed:
260 °C/10 seconds, 6.35mm from case.
Mounting torque: 5 in. - lbs. max
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