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參數(shù)資料
| 型號(hào)： | MBRF30H50CTHE3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 147K |
| 代理商： | MBRF30H50CTHE3/45 |
New Product
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
Vishay General Semiconductor
Document Number: 88866
Revision: 31-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0
10
20
30
40
50
25
0
75
100
125
150
175
MBRF
MBR, MBRB
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
1
100
0
25
50
75
100
125
150
10
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
Instantaneous Forward Voltage (V)
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
T
J = 150 °C
T
J = 25 °C
T
J = 125 °C
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
60
40
20
0
100
80
0.0001
0.001
0.1
0.01
1
10
100
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(mA)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
0.1
1
100
10
1000
100
10 000
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.01
0.1
1
10
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
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