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參數(shù)資料
| 型號： | MBRF15H45CT-E3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 146K |
| 代理商： | MBRF15H45CT-E3/45 |
New Product
MBR(F,B)15H35CT thru MBR(F,B)15H60CT
Vishay General Semiconductor
Document Number: 88782
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Derating Curve Per Diode
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0
5
10
15
20
25
50
75
100
125
150
175
MBRF
MBR, MBRB
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
10
1
100
25
50
75
100
125
150
175
T
J = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
1
10
100
MBR15H35CT - MBR15H45CT
MBR15H50CT - MBR15H60CT
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
060
40
100
80
0.0001
0.001
0.1
0.01
1
10
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
MBR15H35CT - MBR15H45CT
MBR15H50CT - MBR15H60CT
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(mA)
20
1
0.1
10
100
1000
10
1
MBR15H35CT - MBR15H45CT
MBR15H50CT - MBR15H60CT
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
0.01
0.1
1
10
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR15H45CT-HE3/45 | 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR15H35CT-HE3/45 | 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB15H50CT-E3/81 | 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBR15H60CT/45-E3 | 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB15H35CT/81-E3 | 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRF15H45CTHE3/45 | 功能描述:肖特基二極管與整流器 45 Volt 15A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRF15H50CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRF15H60CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifiers |
| MBRF15H60CT-E3/45 | 功能描述:肖特基二極管與整流器 60 Volt 15A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRF15H60CTHE3/45 | 功能描述:肖特基二極管與整流器 60 Volt 15A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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