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參數(shù)資料
| 型號(hào)： | MBRF1090-E3/4W |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 135K |
| 代理商： | MBRF1090-E3/4W |
MBR(F,B)1090 & MBR(F,B)10100
Vishay General Semiconductor
Document Number: 89034
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
High-Voltage Schottky Rectifier
FEATURES
Trench MOS Schottky technology
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AC and ITO-220AC
package)
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
freewheeling
diodes,
dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
90 V, 100 V
IFSM
150 A
VF
0.65 V
TJ max.
150 °C
CASE
PIN 2
PIN 1
MBR1090
MBR10100
MBRB1090
MBRB10100
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
MBRF1090
MBRF10100
PIN 2
PIN 1
TO-263AB
TO-220AC
ITO-220AC
TMBS
1
2
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR1090
MBR10100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 133 °C
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
EAS
130
mJ
Peak repetitive reverse current
at tp = 2 s, 1 kHz, TJ = 38 °C ± 2 °C
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Isolation voltage (ITO-220AC only)
From terminal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
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| MBRF2050CT | 20 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF3050CT | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRF1090-M3/4W | 制造商:Vishay Semiconductors 功能描述:10A,90V,TRENCH SKY RECT. |
| MBRF10H | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Barrier Rectifiers |
| MBRF10H100 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Voltage Schottky Rectifiers |
| MBRF10H100/45 | 功能描述:DIODE SCHTKY 10A 100V ITO-220AC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間(trr):300ns 電流 - 在 Vr 時(shí)反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| MBRF10H1000CT | 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Plastic package has Underwriters Laboratory Flammability Classification 94V-0 |
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