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參數(shù)資料
| 型號(hào)： | MBRD660CTTRRPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | DIODE 3 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode |
| 中文描述： | Schottky (Diodes & Rectifiers) 6.0 Amp 60 Volt |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 65K |
| 代理商： | MBRD660CTTRRPBF |
MBRD650CT, MBRD660CT
2
Bulletin PD-20755 rev. C 03/03
www.irf.com
V
FM
Max. Forward Voltage Drop
(Per Leg) * See Fig. 1
0.7
0.9
0.65
0.85
0.1
15
145
V
V
V
V
@
@
@
@
T
J
= 25 °C
T
J
= 125 °C
V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
3A
6A
3A
6A
(1)
I
RM
Max. Reverse Leakage Current
(Per Leg) * See Fig. 2
Typ. Junction Capacitance (Per Leg)
mA
mA
pF
(1)
C
T
L
S
dv/dt Max. Voltage Rate of Change
Typical Series Inductance (Per Leg)
5.0
nH
10000
V/μs
(Rated V
R
)
T
J
T
stg
R
thJC
Max. Thermal Resistance (Per Leg)
Junction to Case
Max. Junction Temperature Range (*) -40 to 150
°C
Max. Storage Temperature Range
-40 to 150
°C
6
°C/W DC operation
* See Fig. 4
(Per Device)
3
R
thJA
Max. Thermal Resistance Junction
to Ambient
80
°C/W
wt
Approximate Weight
0.3 (0.01)
g (oz.)
Case Style
D-Pak
Similar to TO-252AA
Thermal-Mechanical Specifications
T
J
= 25 °C
T
J
= 125 °C
Electrical Specifications
(1) Pulse Width < 300μs, Duty Cycle <2%
V
R
= rated V
R
Part number
MBRD650CT
MBRD660CT
V
R
V
RWM
Max.
Working Peak Reverse Voltage (V)
Max.
DC Reverse Voltage (V)
50
60
Voltage Ratings
Parameters
Value
Units
Conditions
Parameters
Value
Units
Conditions
I
F(AV)
Max. Average Forward(Per Leg)
Current * See Fig. 5
I
FSM
Surge Current * See Fig. 7
3.0
6
490
A
50% duty cycle @ T
C
= 128°C, rectangular wave form
(Per Device)
Max. Peak One Cycle Non-Repetitive
5μs Sine or 3μs Rect. pulse
75
10ms Sine or 6ms Rect. pulse
E
AS
I
AR
Non-Repet. Aval. Energy(Per Leg)
6
mJ
T
J
= 25 °C, I
AS
= 1 Amp, L = 12 mH
Current decaying linearly to zero in 1 μsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Repetitive Avalanche Current
(Per Leg)
0.6
A
Absolute Maximum Ratings
Following any rated
load condition and with
rated V
RRM
applied
A
Parameters
Value
Units
Conditions
<
thermal runaway condition for a diode on its own heatsink
Rth( j-a)
(*) dPtot
dTj
1
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