參數(shù)資料
型號: MBRD320TR
元件分類: 整流器
英文描述: 3 A, 20 V, SILICON, RECTIFIER DIODE, TO-252AA
封裝: PLASTIC, SIMILAR TO TO-252AA, DPAK-3
文件頁數(shù): 2/7頁
文件大?。?/td> 182K
代理商: MBRD320TR
MBRD320, MBRD330, MBRD340
Bulletin PD-20756 rev. F 05/06
2
www.irf.com
Part number
MBRD320
MBRD330
MBRD340
V
R
Max. DC Reverse Voltage (V)
20
30
40
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
TJ
Max.JunctionTemperatureRange(*) - 40 to 150
°C
Tstg
Max. Storage Temperature Range
- 40 to 175
°C
R
thJC Max. Thermal Resistance Junction
6.0
°C/W DC operation * See Fig. 4
to Case
R
thJA Max. Thermal Resistance Junction
80
°C/W
to Ambient
wt
Approximate Weight
0.3 (0.01)
g (oz.)
Case Style
D - PAK
Similar to TO-252AA
Device Marking
MBRD340
Thermal-Mechanical Specifications
Parameters
Value
Units
Conditions
V
FM
Max. Forward Voltage Drop (1)
0.48
0.6
V
@ 3A
See Fig. 1
0.58
0.7
V
@ 6A
0.41
0.49
V
@ 3A
0.55
0.625
V
@ 6A
I
RM
Max. Reverse Leakage Current (1)
0.02
0.2
mA
TJ = 25 °C
See Fig. 2
10.7
20
mA
TJ = 125 °C
CT
Typical Junction Capacitance
189
-
pF
VR = 5VDC (test signal range 100kHz to
1Mhz), @ 25°C
L
S
Typical Series Inductance
5.0
-
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
-
10000
V/ μs
(Rated VR)
(1) Pulse Width < 300μs, Duty Cycle <2%
T
J =
25 °C
Electrical Specifications
Parameters
Typ.
Max.
Units Conditions
V
R = rated VR
T
J =
125 °C
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
I
F(AV) Max. Average Forward Current
3.0
A
50% duty cycle @ T
L = 133°C, rectangular wave form
I
FSM
Max. Peak One Cycle Non-Repetitive
490
5μs Sine or 3μs Rect. pulse
Surge Current
75
10ms Sine or 6ms Rect. pulse
E
AS
Non Repetitive Avalanche Energy
8.0
mJ
T
J = 25 °C, IAS = 1Amp, L = 16mH
I
AR
Repetitive Avalanche Current
1.0
A
Current decaying linearly to zero in 1 μsec
Frequency limited by T
J max. Va = 1.5 x Vr typical
Parameters
Value Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated VRRMapplied
相關(guān)PDF資料
PDF描述
MBRD330TRR 3 A, 30 V, SILICON, RECTIFIER DIODE, TO-252AA
MBRD330-T4 3 A, SILICON, RECTIFIER DIODE
MBRD330 3 A, SILICON, RECTIFIER DIODE
MBRD360-T4 3 A, SILICON, RECTIFIER DIODE, TO-250AA
MBRD360-G 3 A, SILICON, RECTIFIER DIODE, TO-250AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBRD320TRL 功能描述:肖特基二極管與整流器 3.0 Amp 20 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBRD320TRLPbF 制造商:Vishay Intertechnologies 功能描述:Diode Schottky 20V 3A 3-Pin(2+Tab) DPAK T/R
MBRD320TRPBF 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 3.0 A
MBRD320TRR 功能描述:肖特基二極管與整流器 3.0 Amp 20 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBRD320TRRPBF 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 3.0 A