參數(shù)資料
型號(hào): MBRB3030CT
廠商: MOTOROLA INC
元件分類: 參考電壓二極管
英文描述: SWITCHMODE⑩ Power Rectifier
中文描述: 15 A, 30 V, SILICON, RECTIFIER DIODE
封裝: D2PAK-3
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 77K
代理商: MBRB3030CT
3
Rectifier Device Data
TYPICAL CHARACTERISTICS
IF(AV), AVERAGE FORWARD CURRENT (A)
15
10
5
0
15
P
20
25
DC
10
10
0
5
20
TJ = 150
°
C
π
(RESISTIVE LOAD)
SQUARE WAVE
TA, AMBIENT TEMPERATURE (
°
C)
I
10
0
150
100
0
50
SQUARE WAVE
π
(RESISTIVE LOAD)
10
20
DC
R
θ
JA = 50
°
C/W
TA, AMBIENT TEMPERATURE (
°
C)
5
0
50
I
100
DC
10
20
SQUARE WAVE
150
R
θ
JA = 25
°
C/W
IPK
IAV
= 5.0 (CAPACITIVE
LOAD)
TC, CASE TEMPERATURE (
°
C)
30
20
10
0
120
140
130
I
135
125
150
10
20
DC
IPK
IAV
= 5.0 (CAPACITIVE
LOAD)
Figure 6. Current Derating, Infinite Heatsink
Figure 7. Current Derating
Figure 8. Current Derating, Free Air
Figure 9. Forward Power Dissipation
4
2
155
145
15
10
0
SQUARE WAVE
π
(RESISTIVE LOAD)
R
θ
JC = 1
°
C/W
π
(RESISTIVE LOAD)
8
6
IPK
IAV
= 5.0 (CAPACITIVE
LOAD)
IPK
IAV
= 5.0 (CAPACITIVE
LOAD)
Figure 10. Thermal Response
t, TIME (ms)
1.0
0.1
0.01
100
0.1
R
10
1.0
1000
SINGLE PULSE
R
Ppk
Ppk
tp
t1
TIME
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of an
R
θ
JL [D + (1 – D)
r(t1 + tp) + r(tp) – r(t1)]
wTJL = Ppk
r(TJL = the increase in junction temperature above the lead temperature
r(t) =
r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.
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