參數(shù)資料
型號(hào)： MBRB25H60CT-HE3/81
廠商： VISHAY SEMICONDUCTORS
元件分類： 整流器
英文描述： 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù)： 1/5頁(yè)
文件大小： 133K
代理商： MBRB25H60CT-HE3/81
Document Number: 88789
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 18-Mar-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
MBR(F,B)25H35CT thru MBR(F,B)25H60CT
Vishay General Semiconductor
New Product
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
Solder
dip
260
°C,
40
s
(for
TO-220AB
and
ITO-220AB package)
AEC-Q101 qualified
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling
diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test, HE3 suffix for high reliability grade (AEC-Q101
qualified), meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.54 V, 0.60 V
IR
100 μA
TJ max.
175 °C
TO-263AB
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR25HxxCT
ITO-220AB
MBRB25HxxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF25HxxCT
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR25H35CT
MBR25H45CT
MBR25H50CT
MBR25H60CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Max. average forward
rectified current (fig. 1)
total device
IF(AV)
30
A
per diode
15
Non-repetitive avalanche energy per diode
at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode
at tp = 2.0 μs, 1 kHz
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy
(8/20 μs waveform)
ERSM
25
20
mJ
相關(guān)PDF資料
PDF描述
MBRF25H45CT-HE3/45 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF25H50CT-E3/45 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF25H60CT-HE3/45 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR25H45CT-E3/45 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRB25H35CTHE3/45 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB
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