參數(shù)資料
型號: MBRB2560CT-E3/31
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù): 1/5頁
文件大?。?/td> 150K
代理商: MBRB2560CT-E3/31
Vishay General Semiconductor
MBR(F,B)2535CT thru MBR(F,B)2560CT
Document Number 88675
22-Aug-06
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
Solder Dip 260 °C, 40 seconds (for TO-220AB &
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, free-wheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
15 A x 2
VRRM
35 V to 60 V
IFSM
150 A
VF
0.73 V at 30 A, 0.65 V at 15 A
Tj max
150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR25xxCT
ITO-220AB
MBRF25xxCT
MBRB25xxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
TO-263AB
1
2
3
PIN 2
PIN 1
PIN 3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR2535CT MBR2545CT MBR2550CT
MBR2560CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
Maximum DC blocking voltage
VDC
35
45
50
60
Maximum average forward rectified current
at TC = 130 °C
Total device
per diode
IF(AV)
30
15
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode
at tp = 2 s, 1 kHz
IRRM
1.0
0.5
Peak non-repetitive reverse energy (8/20 s waveform)
per diode
ERSM
25
mJ
Electrostatic discharge capacitor voltage Human body
model: c = 100 pF, R = 1.5 k
Ω
VC
25
kV
Voltage rate of change (rated VR)
dv/dt
10000
V/s
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