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參數(shù)資料
| 型號(hào)： | MBRB2035CT-HE3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 500K |
| 代理商： | MBRB2035CT-HE3/45 |
MBR(F,B)2035CT thru MBR(F,B)2060CT
Vishay General Semiconductor
Document Number: 88674
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A x 2
VRRM
35 V to 60 V
IFSM
150 A
VF
0.57 V, 0.70 V
TJ max.
150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR20xxCT
ITO-220AB
MBRF20xxCT
MBRB20xxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR2035CT
MBR2045CT
MBR2050CT
MBR2060CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified
current at TC = 135 °C
total device
per diode
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode at
tp = 2 s, 1 kHz
IRRM
1.0
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBRB2045CT-E3/45 | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2045CT-HE3/45 | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2045CT-HE3/81 | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2060CT-E3/81 | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF2035CT-E3/45 | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
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