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參數(shù)資料
| 型號(hào)： | MBRB20200CT-T4 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 83K |
| 代理商： | MBRB20200CT-T4 |
SENSITRON
SEMICONDUCTOR
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR20200CT
MBRB20200CT
MBR20200CT-1
Data Sheet 2915, Rev. B
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
200
V
10(Per leg)
Max. Average Forward
IF(AV)
50% duty cycle @TC =125°C,
rectangular wave form
20(Per device)
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
180
A
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(per leg)*
VF1
@ 10A, Pulse, TJ = 25
°C
@ 20 A, Pulse, TJ = 25 °C
0.90
1.00
V
VF2
@ 10 A, Pulse, TJ = 125 °C
@ 20 A, Pulse, TJ = 125
°C
0.80
0.90
V
Max. Reverse Current (per
leg)*
IR1
@VR = rated VR
TJ = 25 °C
1.00
mA
IR2
@VR = rated VR
TJ = 125
°C
50
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz
500
pF
Typical Series Inductance
(per leg)
LS
Measured lead to lead 5 mm from
package body
8.0
nH
Max. Voltage Rate of Change
dv/dt
-
10,000
V/
s
* Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-55 to +150
°C
Max. Storage Temperature
Tstg
-
-55 to +150
°C
Maximum Thermal
Resistance Junction to Case
(per leg)
RθJC
DC operation
2.0
°C/W
Maximum Thermal
Resistance Junction to Case
(per package)
RθJC
DC operation
-
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθCS
Mounting surface,
smooth and greased
(only for TO-220)
-
°C/W
Approximate Weight
wt
-
2
g
Mounting Torque
TM
-
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2PAK TO-262
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