參數(shù)資料
型號: MBRB20135CT
廠商: SENSITRON SEMICONDUCTOR
元件分類: 整流器
英文描述: 10 A, SILICON, RECTIFIER DIODE
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 3/5頁
文件大?。?/td> 342K
代理商: MBRB20135CT
SENSITRON
SEMICONDUCTOR
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
3 of 5
Data Sheet 2926, Rev. C
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Unit
s
135
MBR20135CT
Peak Inverse Voltage
VRWM
-
150
MBR20150CT
V
10(Per leg)
Max. Average Forward
IF(AV)
50% duty cycle @TC =133°C,
rectangular wave form
20(Per device)
A
Peak Repetitive Forward
Current (per leg)
IFRM
Rated VR, square wave,
20KHz Tc = 133 °C
20
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
150
A
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(per leg) *
VF1
@ 10A, Pulse, TJ = 25
°C
@ 20A, Pulse, TJ = 25
°C
0.93
1.10
V
VF2
@ 10 A, Pulse, TJ = 125
°C
@ 20 A, Pulse, TJ = 125
°C
0.83
1.00
V
Max. Reverse Current (per
leg) *
IR1
@VR = rated VR
TJ = 25
°C
0.10
mA
IR2
@VR = rated VR
TJ = 125
°C
6
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25
°C
fSIG = 1MHz
400
pF
Typical Series Inductance
(per leg)
LS
Measured lead to lead 5 mm from
package body
8.0
nH
Max. Voltage Rate of Change
dv/dt
-
10,000
V/
s
* Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symb
ol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-65 to +175
°C
Max. Storage Temperature
Tstg
-
-65 to +175
°C
Maximum Thermal
Resistance Junction to Case
(per leg)
RθJC
DC operation
2.0
°C/W
Maximum ThermalResistance
Junction to Amibient
RθJA
DC operation
60
°C/W
Approximate Weight
wt
-
2
g
Mounting Torque
TM
-
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2PAK TO-262
2013520150
20120150
20120150
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