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參數(shù)資料
| 型號： | MBRB1560CTHE3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 492K |
| 代理商： | MBRB1560CTHE3/45 |
MBR(F,B)1535CT thru MBR(F,B)1560CT
Vishay General Semiconductor
Document Number: 88670
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0
50
100
150
0
5
10
15
20
25
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Resistive or Inductive Load
1
10
100
50
25
75
100
125
150
175
Peak
For
w
ard
S
u
rge
C
u
rrent
(A)
Number of Cycles at 60 Hz
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
1
10
100
Pulse Width = 300 s
1 % Duty Cycle
T
J = 125 °C
T
J = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
MBR1535CT - MBR1545CT
MBR1550CT & MBR1560CT
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
T
J = 125 °C
T
J = 25 °C
T
J = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
MBR1535CT - MBR1545CT
MBR1550CT & MBR1560CT
0.1
1
10
100
10
100
1000
10 000
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
MBR1535CT - MBR1545CT
MBR1550CT & MBR1560CT
0.01
0.1
1
10
100
0.1
1
10
100
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBRF1535CTHE3/45 | 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR1560CT-1 | 15 A, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR15H35CT-E3 | 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR15H45CT-E3 | 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB15H45CT-E3 | 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRB1560TR | 功能描述:DIODE SCHOTTKY 60V D2PAK 制造商:smc diode solutions 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 二極管類型:肖特基 電壓 - DC 反向（Vr）（最大值）:60V 電流 - 平均整流（Io）:- 不同 If 時的電壓 - 正向（Vf）:770mV @ 15A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時間（trr）:- 不同?Vr 時的電流 - 反向漏電流:5mA @ 60V 不同?Vr，F(xiàn) 時的電容:700pF @ 5V， 1MHz 安裝類型:表面貼裝 封裝/外殼:TO-263-3，D2Pak（2 引線+接片），TO-263AB 供應(yīng)商器件封裝:D2PAK 工作溫度 - 結(jié):-55°C ~ 150°C 標(biāo)準(zhǔn)包裝:1 |
| MBRB1580CT | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:15 Amp Schottky Barrier Rectifier 20 to 100 Volts |
| MBRB15CTPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SCHOTTKY RECTIFIER |
| MBRB15H35CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRB15H35CT-E3/45 | 功能描述:肖特基二極管與整流器 35 Volt 15A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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