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參數(shù)資料
| 型號(hào)： | MBRB10H90-HE3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 128K |
| 代理商： | MBRB10H90-HE3/45 |
MBR(F,B)10H90 & MBR(F,B)10H100
Vishay General Semiconductor
Document Number: 88667
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
0.1
0.2
0.6
0.7
0.8
0.9
0.3
100
10
0.1
0.01
1.0
0.4
0.5
1.0
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
T
J = 100 °C
T
J = 150 °C
T
J = 125 °C
T
J = 175 °C
T
J = 25 °C
1
1000
0.01
0.1
10 000
100
10
20
100
40
60
80
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
T
J = 100 °C
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
0.1
10
1
100
1000
10 000
10
100
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
0.01
0.1
1
10
100
0.1
1
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBRF10H90-E3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRB10H90-E3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBR10H100CT-E3/45 | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10H100CT-HE3/45 | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB10H100CT-HE3/45 | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
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