參數(shù)資料
型號: MBRA120TRPBF
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 1 A, 20 V, SILICON, SIGNAL DIODE
封裝: LEAD FREE, SIMILAR TO D-64, SMA, 2 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 113K
代理商: MBRA120TRPBF
MBRA120TRPbF
Bulletin PD-20776 07/04
2
www.irf.com
Part number
MBRA120TR
V
R
Max. DC Reverse Voltage (V)
V
RWM Max. Working Peak Reverse Voltage (V)
20
Voltage Ratings
V
FM
Max. Forward Voltage Drop (1)
0.42
0.45
V
@ 1A
0.46
0.52
V
@ 2A
0.33
0.37
V
@ 1A
0.39
0.45
V
@ 2A
0.30
0.35
V
@ 1A
0.36
0.43
V
@ 2A
I
RM
Max. Reverse Leakage Current (1)
0.015
0.2
mA
T
J = 25 °C
2.0
6.0
mA
T
J = 100 °C
V
R = rated VR
7.0
20
mA
T
J = 125 °C
CT
Typical Junction Capacitance
110
-
pF
VR = 5VDC (test signal range 100kHz to
1Mhz), @ 25°C
L
S
Typical Series Inductance
2.0
-
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
-
10000
V/ s (Rated VR)
T
J =
25 °C
T
J = 100 °C
Electrical Specifications
Parameters
Typ.
Max.
Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
T
J =
125 °C
T
J
Max. Junction Temperature Range(*) - 65 to 150
°C
T
stg
Max. Storage Temperature Range
- 65 to 150
°C
R
thJL Max. Thermal Resistance Junction
35
°C/W DC operation
to Lead
(**)
R
thJA Max. Thermal Resistance Junction
80
°C/W
to Ambient
Wt
Approximate Weight
0.07(0.002) gr (oz)
Case Style
SMA
Similar D-64
Device Marking
IR12A
Parameters
Value
Units
Conditions
<
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
Thermal-Mechanical Specifications
(*) dPtot
1
dTj
Rth( j-a)
I
F(AV) Max. Average Forward Current
1.0
A
50% duty cycle @ T
L = 136°C, rectangular wave form
I
FSM
Max. Peak One Cycle Non-Repetitive
310
5s Sine or 3s Rect. pulse
Surge Current
40
10ms Sine or 6ms Rect. pulse
E
AS
Non Repetitive Avalanche Energy
2.0
mJ
T
J = 25 °C, IAS = 1A, L = 4mH
I
AR
Repetitive Avalanche Current
1.0
A
Parameters
Value Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated VRRM applied
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