參數(shù)資料
型號(hào): MBR5H150VPA-E1
廠商: BCD SEMICONDUCTOR MANUFACTURING LTD
元件分類: 整流器
英文描述: 5 A, 150 V, SILICON, RECTIFIER DIODE, DO-201AD
封裝: ROHS COMPLIANT, PLASTIC, DO-27(A), 2 PIN
文件頁數(shù): 3/7頁
文件大小: 434K
代理商: MBR5H150VPA-E1
Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR5H150
Aug. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
3
Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ <
1/
θJA.
Recommended Operating Conditions
Parameter
Symbol
Condition
Value
Unit
θJC
Junction to Case
TBD
Maximum Thermal Resistance
θJA
Junction to
Ambient
TBD
°C/W
Electrical Characteristics
Parameter
Symbol
Conditions
Value
Units
Maximum Instantaneous Forward
Voltage Drop (Note 3)
VF
IF=5A, TC=25°C
0.92
V
Rated
DC
Voltage,
TC=25°C
8.0
A
Maximum Instantaneous Reverse
Current (Note 3)
IR
Rated
DC
Voltage,
TC=150°C
50.0
mA
Note 3: Pulse Test: Pulse Width = 300
s, Duty Cycle ≤2.0%.
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
150
V
Average Rectified Forward Current
(Rated VR) TC = 150°C
IF(AV)
5
A
Non repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase, 60Hz)
IFSM
125
A
Operating Junction Temperature Range(Note 2)
TJ
175
°C
Storage Temperature Range
TSTG
-55 to 175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/
s
ESD Ratings: Machine Model = C
Human Body Model =3B
> 400
> 8000
V
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