參數資料
型號: MBR4060WTPBF
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Diode Schottky 60V 40A 3-Pin(3+Tab) TO-247AC
中文描述: Schottky (Diodes & Rectifiers) 40 Amp 60 Volt
文件頁數: 1/4頁
文件大?。?/td> 82K
代理商: MBR4060WTPBF
MBR4035PT thru MBR4060PT
Vishay General Semiconductor
www.vishay.com
Revision: 21-Nov-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 88679
Dual Common-Cathode Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 275 °C max.10 s, per JESD 22-B106
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters or polarity protection application.
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
Note
(1)
2.0 μs pulse width, f = 1.0 kHz
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
40 A
35 V to 60 V
400 A
0.60 V, 0.62 V
150 °C
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR4035PT
MBR4045PT
MBR4050PT
MBR4060PT
UNIT
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current T
C
= 125 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse surge current per diode
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
V
RRM
V
RWM
V
DC
I
F(AV)
35
35
35
45
45
45
50
50
50
60
60
60
V
V
V
A
40
I
FSM
400
A
I
RRM (1)
dV/dt
T
J
T
STG
2.0
1.0
A
10 000
- 65 to + 150
- 65 to + 175
V/μs
°C
°C
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