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參數(shù)資料
| 型號： | MBR4060CT-1-G |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 40 A, SILICON, RECTIFIER DIODE, TO-262AA |
| 封裝： | PLASTIC, TO-262, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 165K |
| 代理商： | MBR4060CT-1-G |
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet M2688, Rev.A
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR4060CT-G
MBRB4060CT-G
MBR4060CT-1-G
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
60
V
Max. Average Forward
IF(AV)
@TC = 105°C, Rated VR
40
A
Max. Peak One Cycle
Non-Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
400
A
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(per leg) *
VF1
@ 20A, Pulse, TJ = 25
°C
@ 40A, Pulse, TJ = 25
°C
0.60
0.78
V
VF2
@ 20A, Pulse, TJ = 125
°C
@ 40A, Pulse, TJ = 125
°C
0.58
0.75
V
Max. Reverse Current
IR1
@VR = rated VR TJ = 25
°C
1
mA
(per leg) *
IR2
@VR = rated VR TJ = 100
°C
50
mA
IR3
@VR = rated VR TJ = 125
°C
95
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25
°C
fSIG = 1MHz
900
pF
Typical Series Inductance
(per leg)
LS
Measured lead to lead 5 mm from
package body
8.0
nH
Max. Voltage Rate of Change
dv/dt
-
10,000
V/
s
* Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-55 to +150
°C
Max. Storage Temperature
Tstg
-
-55 to +150
°C
Maximum Thermal
Resistance Junction to Case
RθJC
DC operation
1.5
°C/W
Maximum Thermal
Resistance, Junction to
Case(Per package)
RθJC
DC operation
50
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθCS
Mounting surface,
smooth and greased
(only for TO-220)
0.50
°C/W
Approximate Weight
wt
-
2
g
Mounting Torque
TM
-
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2PAK TO-262(Suffix”-1” for TO-262;”MBRB x” for D2PAK)
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