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參數(shù)資料
| 型號(hào)： | MBR350PBF |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 50 V, SILICON, RECTIFIER DIODE |
| 封裝： | C-16, 2 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 33K |
| 代理商： | MBR350PBF |
MBR350, MBR360
Bulletin PD-20594 rev. B 03/03
2
www.irf.com
TJ
Max. Junction Temperature Range(*)
-40 to 150
°C
Tstg
Max. Storage Temperature Range
-40 to 150
°C
R
thJL
Typical Thermal Resistance Junction
30
°C/W DC operation (* See Fig. 4)
to Lead
(**)
wt
Approximate Weight
1.2 (0.042) g (oz.)
Case Style
C - 16
I
F(AV)
Max. Average Forward Current
3.0
A
50% duty cycle @ T
L
= 50°C, rectangular wave form
* See Fig. 4
I
FSM
Max. Peak One Cycle Non-Repetitive
460
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 6
80
10ms Sine or 6ms Rect. pulse
EAS
Non-Repetitive Avalanche Energy
5.0
mJ
TJ = 25 °C, IAS = 1 Amps, L = 10 mH
I
AR
Repetitive Avalanche Current
1.0
A
Current decaying linearly to zero in 1 sec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Part number
MBR350
MBR360
VR
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
50
60
Thermal-Mechanical Specifications
V
FM
Max. Forward Voltage Drop
0.58
V
@ 1.0A
* See Fig. 1
(1)
0.73
V
@ 3.0A
T
J
= 25 °C
1.06
V
@ 9.4A
0.49
V
@ 1.0A
0.64
V
@ 3.0A
T
J
= 125 °C
0.89
V
@ 9.4A
I
RM
Max. Reverse Leakage Current
0.6
mA
TJ = 25 °C
* See Fig. 2
(1)
8
mA
TJ = 100 °C
V
R
= rated V
R
15
mA
TJ = 125 °C
CT
Typical Junction Capacitance
190
pF
VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LS
Typical Series Inductance
9.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/s
(Rated VR)
Electrical Specifications
(1) Pulse Width < 300s, Duty Cycle <2%
Parameters
Value
Units
Conditions
Parameters
Value
Units
Conditions
(**) Mounted 1 inch square PCB, thermal probe connected to lead 2mm from package
Absolute Maximum Ratings
Following any rated
load condition and with
rated V
RRM applied
A
Parameters
Value
Units
Conditions
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
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