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參數(shù)資料
| 型號(hào)： | MBR350 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 50 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, C-16, 2 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 89K |
| 代理商： | MBR350 |
Document Number: 93450
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 06-Nov-08
3
MBR350, MBR360
Schottky Rectifier, 3 A
Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Forward Voltage Drop - V
FM
(V)
Instantaneous
Forward
Current
-
I
F
(A)
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj = 150C
Tj = 125C
Tj = 25C
0.001
0.01
0.1
1
10
100
020
40
60
125C
25C
T = 150C
J
Reverse Voltage - V
R
(V)
Reverse
Current
-
I
R
(mA)
10
100
1000
0
40
80
120
160
T = 25C
J
Junction
Capacitance
-
C
T
(pF)
Reverse Voltage - V
R
(V)
Average Forward Current - I
F(AV)
(A)
Allowable
Lead
Temperature
(°C)
0
20
40
60
80
100
120
140
160
012345
DC
Square wave (D = 0.50)
80% Rated Vr applied
see note (1)
Average
Power
Loss
(Watts)
Average Forward Current - I
F(AV)
(A)
0
0.5
1
1.5
2
2.5
3
00.5 11.5 22.5 33.5 4 4.5 5
DC
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
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