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參數(shù)資料
| 型號： | MBR30H100PT-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 321K |
| 代理商： | MBR30H100PT-E3 |
MBR30H90PT & MBR30H100PT
Vishay General Semiconductor
Document Number: 88678
Revision: 25-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
freewheeling
diodes,
dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
15 A x 2
VRRM
90 V, 100 V
IFSM
265 A
VF
0.67 V
IR
5.0 A
TJ max.
175 °C
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR30H90PT
MBR30H100PT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current
total device
per diode
IF(AV)
30
15
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
265
A
Peak repetitive reverse surge current at tp = 2 s, f = 1 kHz
per diode
IRRM
1.0
A
Non-repetitive avalanche energy (IAS = 0.5 A, L = 60 mH)
per diode
EAS
7.5
mJ
Voltage rate of change at (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR30H100PT-E3/45 | 功能描述:肖特基二極管與整流器 100 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR30H100PT-E3/450 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| MBR30H10PT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| MBR30H150C7G | 制造商:ON Semiconductor 功能描述: |
| MBR30H150CT | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:30 AMP SCHOTTKY RECTIFIERS |
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