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參數(shù)資料
| 型號(hào)： | MBR30H100CT-M3/4W |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | MBR30H100CT-M3/4W |
Document Number: 89156
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 17-Nov-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
MBR30H90CT, MBR30H100CT
Vishay General Semiconductor
New Product
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, dc-to-dc converters or polarity
protection application.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base
P/N-M3
-
halogen-free
and
RoHS
compliant,
commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
90 V, 100 V
IFSM
275 A
VF
0.67 V
IR
5.0 A
TJ max.
175 °C
TO-220AB
MBR30H90CT,
MBR30H100CT
1
2
3
PIN 1
PIN 2
CASE
PIN 3
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR30H90CT
MBR30H100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current (fig. 1)
total device
IF(AV)
30
A
per diode
15
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
275
A
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz
IRRM
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
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參數(shù)描述 |
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