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參數(shù)資料
| 型號： | MBR3060PT-G |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封裝： | GREEN, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 120K |
| 代理商： | MBR3060PT-G |
SENSITRON
SEMICONDUCTOR
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR3030PT -G -MBR3060PT-G
Data Sheet 3491, Rev. -
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
3030PT-G
MBR
3035PT-G
MBR
3040PT-G
MBR
3045PT-G
MBR
3050PT-G
MBR
3060PT-G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
35
40
45
50
60
V
RMS Reverse Voltage
VR(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current
@TC = 95°C
IO
30
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
200
A
Forward Voltage
@IF = 20A @TC = 25°C
@IF = 20A @TC = 125°C
VFM
0.65
0.60
0.75
0.65
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage
@TA = 100°C
IRM
1.0
60
5.0
100
mA
Typical Junction Capacitance (Note 1)
Cj
700
pF
Typical Thermal Resistance Junction to Case (Note 2)
R JC
1.4
2.0
K/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
Green Products
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