參數(shù)資料
型號： MBR3045PTL
廠商： LITE-ON SEMICONDUCTOR CORP
元件分類： 整流器
英文描述： 30 A, 45 V, SILICON, RECTIFIER DIODE
封裝： PLASTIC, TO-3P, 3 PIN
文件頁數(shù)： 1/3頁
文件大小： 81K
代理商： MBR3045PTL
MBR3030PTL thru 3060PTL
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-3P molded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
VF
MBR
3030PTL
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
@TC
=110 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage (Note 1)
30
200
-
0.57
0.80
0.72
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 2)
5
C/W
TJ =25 C
CJ
Typical Junction Capacitance per
element (Note 3)
600
pF
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
mA
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Voltage Rate of Change (Rated VR)
TJ =125 C
R0JC
dv/dt
10000
V/us
IF =15A @
IF =30A @
MBR
3035PTL
35
24.5
35
MBR
3040PTL
40
28
40
MBR
3045PTL
45
31.5
45
MBR
3050PTL
50
35
50
MBR
3060PTL
60
42
60
V
0.85
0.75
1.05
0.90
TJ =125 C
1
60
5
100
TO-3P
PIN 1
PIN 3
PIN 2
CASE
E
L
Q
P
N
M
F
C
B
A
O
K
J
I
H
G
D
L
PIN
1
2
3
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 30 Amperes
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
TJ =25 C
All Dimensions in millimeter
DIM.
A
C
D
E
F
G
B
M
L
K
J
I
H
O
P
N
Q
TO-3P
MIN.
MAX.
15.75
16.25
21.75
21.25
19.60
20.10
4.38
3.78
1.88
2.08
4.87
5.13
1.90
2.16
1.22
1.12
2.90
3.20
5.20
5.70
2.10
2.40
0.76
0.51
2.93
3.22
1.93
2.18
20 TYP
4.4TYP.
10 TYP
SEMICONDUCTOR
LITE-ON
REV. 4, Oct -2010, KTHD23
相關PDF資料
PDF描述
MBR3060PTL 30 A, 60 V, SILICON, RECTIFIER DIODE
MBR3050PTL 30 A, 50 V, SILICON, RECTIFIER DIODE
MBR3045ST 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-247
MBR3030ST 30 A, 30 V, SILICON, RECTIFIER DIODE, TO-247
MBR3060WT 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AD
相關代理商/技術參數(shù)
參數(shù)描述
MBR3045ST 功能描述:肖特基二極管與整流器 REC 30A 45V SHTKY RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR3045ST_11 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier
MBR3045STG 功能描述:肖特基二極管與整流器 REC 30A 45V SHTKY RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR3045W 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:30 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBR3045WT 功能描述:肖特基二極管與整流器 30 Amp 45 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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