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參數(shù)資料
| 型號(hào)： | MBR3045PT-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封裝： | PLASTIC, TO-3P, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 98K |
| 代理商： | MBR3045PT-E3 |
MBR3035PT thru MBR3060PT
Vishay General Semiconductor
Document Number: 88676
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
100
10
1
0.1
0.01
0
0.2
0.1
0.5
1.0
0.4
0.3
0.6
0.7
0.8
0.9
T
J = 150 °C
T
J = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
1
10
100
0.01
0.001
0.1
20
0
100
40
60
80
T
J = 25 °C
T
J = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
T
J = 125 °C
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
10
1
100
1000
10 000
100
0.1
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
0.01
10
1
100
10
100
0.1
1
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
0.170
(4.3)
0.086(2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078 (1.98) REF.
0.203 (5.16)
0.193 (4.90)
10° TYP.
Both Sides
30°
10
1° REF.
Both Sides
0.030 (0.76)
0.020 (0.51)
0.118 (3.0)
0.108 (2.7)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR3045PT | 30 A, 45 V, SILICON, RECTIFIER DIODE |
| MBR3060PT | 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AD |
| MBR3060WT-S | 30 A, SILICON, RECTIFIER DIODE, TO-247AD |
| MBR30L100CT | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR340-G | 3 A, SILICON, RECTIFIER DIODE, DO-201AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR3045PT-E3/45 | 功能描述:肖特基二極管與整流器 30 Amp 45 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR3045PTG | 功能描述:肖特基二極管與整流器 30A 45V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR3045ST | 功能描述:肖特基二極管與整流器 REC 30A 45V SHTKY RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR3045ST_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier |
| MBR3045STG | 功能描述:肖特基二極管與整流器 REC 30A 45V SHTKY RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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