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參數(shù)資料
| 型號： | MBR2550CT-E3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 129K |
| 代理商： | MBR2550CT-E3/45 |
Document Number: 88675
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 15-Jun-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
MBR(F,B)2535CT thru MBR(F,B)2560CT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
6
18
12
30
0
50
100
150
24
Resistive or Inductive Load
A
v
er
age
F
o
rw
ard
Cu
rrent
(A)
Case Temperature (°C)
0
25
75
50
125
100
150
1
100
10
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
P
eak
F
orw
ard
Surge
Current
(A)
100
10
1.0
0.1
0.01
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
0
0.2
0.1
0.5
1.0
0.4
0.3
0.6
0.7
0.8
0.9
T
J = 150 °C
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
Instantaneous
F
orw
ard
Current
(A)
Instantaneous Forward Voltage (V)
1
10
100
0.01
0.001
0.1
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
20
0
100
40
60
80
T
J = 125 °C
T
J = 25 °C
T
J = 75 °C
Instantaneous
Re
v
e
rse
Current
(mA)
Percent of Rated Peak Reverse Voltage (%)
10
1
100
1000
10 000
100
0.1
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
0.01
10
1
100
10
100
0.1
1
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/W)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBRB2545CT-E3/45 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2545CT-E3/81 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2545CT-HE3/45 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2560CT-E3/81 | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF2535CT-E3/45 | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR2560CT | 功能描述:肖特基二極管與整流器 27 amp Rectifiers Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR2560CT/45 | 功能描述:肖特基二極管與整流器 25 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR2560CT_Q | 功能描述:肖特基二極管與整流器 27 amp Rectifiers Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR2560CT-E3 | 制造商:Vishay Intertechnologies 功能描述:Diode Schottky 60V 30A 3-Pin(3+Tab) TO-220AB Tube |
| MBR2560CT-E3/45 | 功能描述:肖特基二極管與整流器 25 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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