參數(shù)資料
型號: MBR2545CTPG
廠商: ON SEMICONDUCTOR
元件分類: 整流器
英文描述: 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: PLASTIC, CASE 221A, 4 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 38K
代理商: MBR2545CTPG
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 3
1
Publication Order Number:
MBR2545CTP/D
MBR2545CTP
SWITCHMODE
Power Rectifier
. . . using the Schottky Barrier principle with a platinum barrier
metal. These stateoftheart devices have the following features:
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
°C Max. for 10 Seconds
Shipped 50 units per plastic tube
Marking: B2545P
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
(Rated VR, TC = 130°C)
IF(AV)
30
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz,
TC = 130°C)
Per Diode Leg
IFRM
30
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
Per Diode Leg
IFSM
150
A
Peak Repetitive Reverse Surge
Current (2.0
ms, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
65 to +175
°C
Operating Junction Temperature
(Note 1)
TJ
65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/
ms
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
JunctiontoAmbient: dPD/dTJ < 1/RqJA.
Device
Package
Shipping
ORDERING INFORMATION
MBR2545CTP
TO220
CASE 221A
TO220AB
PLASTIC
50 Units/Rail
3
4
1
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
45 VOLTS
1
3
2, 4
2
MARKING DIAGRAM
YY WW
B2545P
AKA
YY
= Year
WW
= Work Week
B2545P= Device Code
AKA
= Diode Polarity
http://onsemi.com
相關(guān)PDF資料
PDF描述
MBR30100CT 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR30100PT 30 A, 100 V, SILICON, RECTIFIER DIODE
MBR30150CT-1-G 30 A, SILICON, RECTIFIER DIODE, TO-262AA
MBR30150CT 15 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR3035PT 15 A, 35 V, SILICON, RECTIFIER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBR2550CT 功能描述:肖特基二極管與整流器 30A 50V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR2550CT/45 功能描述:肖特基二極管與整流器 50 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR2550CT_Q 功能描述:肖特基二極管與整流器 26 amp Rectifiers Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR2560CT 功能描述:肖特基二極管與整流器 27 amp Rectifiers Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR2560CT/45 功能描述:肖特基二極管與整流器 25 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel