參數(shù)資料
型號： MBR2530CT
廠商： LITE-ON ELECTRONICS INC
元件分類： 整流器
英文描述： 30 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/2頁
文件大?。?/td> 79K
代理商： MBR2530CT
MBR2530CT thru 2560CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
MBR
2550CT
50
35
50
MBR
2560CT
60
42
60
VRMS
VDC
VRRM
I(AV)
IFSM
VF
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward
Voltage (per leg)
at (Note 1)
30
150
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=125 C
@TJ=25 C
1.0
50.0
mA
V
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
0.75
0.65
-
Voltage rate of change (Rated VR)
dv/dt
V/us
10,000
Typical Thermal Resistance (Note 3)
R0JC
C/W
1.5
@TJ=125 C
@TJ=25 C
@TC=130 C
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
2.79
N
M
L
K
J
I
1.14
2.29
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1
3
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 30 Amperes
MBR
2545CT
45
31.5
45
MBR
2530CT
30
21
30
MBR
2535CT
35
24.5
35
MBR
2540CT
40
28
40
@TJ=125 C
@TJ=25 C
IF = 15A,
IF = 30A,
-
0.82
0.73
0.2
40.0
Typical Junction Capacitance
per element (Note 2)
CJ
450
pF
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
SEMICONDUCTOR
LITE-ON
REV. 1,Aug-2007, KTHC15
相關(guān)PDF資料
PDF描述
MBR2545CT 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR2560CT45-E3 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF2535CT45-E3 15 A, 35 V, SILICON, RECTIFIER DIODE
MBRF2560CT45-E3 15 A, 60 V, SILICON, RECTIFIER DIODE
MBRB2550CT81 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB
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MBR2535CT/45 功能描述:肖特基二極管與整流器 25 Amp 35 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR2535CT_Q 功能描述:肖特基二極管與整流器 24 amp Rectifiers Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR2535CT-01 制造商:Fairchild Semiconductor Corporation 功能描述:
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